AP65WN1K5S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP65WN1K5S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 22 nS
Cossⓘ - Capacitancia de salida: 44 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de AP65WN1K5S MOSFET
- Selecciónⓘ de transistores por parámetros
AP65WN1K5S datasheet
ap65wn1k5s.pdf
AP65WN1K5S Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 650V D Simple Drive Requirement RDS(ON) 1.5 Fast Switching Characteristic ID3 6A G RoHS Compliant & Halogen-Free S Description AP65WN1K5 series are from the innovated design and silicon process technology to achieve the lowest possible on-re
ap65wn1k5i.pdf
AP65WN1K5I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 650V D Simple Drive Requirement RDS(ON) 1.5 Fast Switching Characteristic ID3 6A G RoHS Compliant & Halogen-Free S Description AP65WN1K5 series are from the innovated design and silicon process technology to achieve the lowest possible on-re
ap65wn1k0i.pdf
AP65WN1K0I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 650V D Simple Drive Requirement RDS(ON) 1 Fast Switching Characteristic ID3 8A G RoHS Compliant & Halogen-Free S Description AP65WN1K0 series are from the innovated design and silicon process technology to achieve the lowest possible on-resi
ap65wn770i.pdf
AP65WN770I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 650V D Simple Drive Requirement RDS(ON) 0.77 Fast Switching Characteristic ID3 10A G RoHS Compliant & Halogen-Free S Description AP65WN770 series are from the innovated design and silicon process technology to achieve the lowest possible on-
Otros transistores... AP6679BGP , AP65WN770P , AP65WN770IN , AP65WN770I , AP65WN470I , AP65WN2K3L , AP65WN2K3I , AP65WN2K3H , IRF640 , AP65WN1K5I , AP65WN1K0I , AP65SL600DI , AP65SL600DH , AP65SL600AR , AP65SL600AJ , AP65SL600AIN , AP65SL600AI .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG
Popular searches
bf495 transistor equivalent | 2sc1313 | 2sb560 replacement | 2sd330 replacement | a1273 transistor | 2sc1384 equivalent | 2sd786 | a940 transistor
