AP65WN1K5S Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP65WN1K5S
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 83.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 22 ns
Cossⓘ - Выходная емкость: 44 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
Тип корпуса: TO263
Аналог (замена) для AP65WN1K5S
AP65WN1K5S Datasheet (PDF)
ap65wn1k5s.pdf

AP65WN1K5SHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 1.5 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re
ap65wn1k5i.pdf

AP65WN1K5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 1.5 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re
ap65wn1k0i.pdf

AP65WN1K0IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 1 Fast Switching Characteristic ID3 8AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN1K0 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-resi
ap65wn770i.pdf

AP65WN770IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 0.77 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN770 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-
Другие MOSFET... AP6679BGP , AP65WN770P , AP65WN770IN , AP65WN770I , AP65WN470I , AP65WN2K3L , AP65WN2K3I , AP65WN2K3H , IRFP460 , AP65WN1K5I , AP65WN1K0I , AP65SL600DI , AP65SL600DH , AP65SL600AR , AP65SL600AJ , AP65SL600AIN , AP65SL600AI .
History: APM4010NU | AM60N10-70PC | IXFH36N50P | IRF6608 | AP4810GSM | CEF12N6 | YJQ40G10A
History: APM4010NU | AM60N10-70PC | IXFH36N50P | IRF6608 | AP4810GSM | CEF12N6 | YJQ40G10A



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
bf495 transistor equivalent | 2sc1313 | 2sb560 replacement | 2sd330 replacement | a1273 transistor | 2sc1384 equivalent | 2sd786 | a940 transistor