AP65WN1K0I Todos los transistores

 

AP65WN1K0I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP65WN1K0I

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 34.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 59 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm

Encapsulados: TO220F

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AP65WN1K0I datasheet

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AP65WN1K0I

AP65WN1K0I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 650V D Simple Drive Requirement RDS(ON) 1 Fast Switching Characteristic ID3 8A G RoHS Compliant & Halogen-Free S Description AP65WN1K0 series are from the innovated design and silicon process technology to achieve the lowest possible on-resi

 6.1. Size:64K  ape
ap65wn1k5s.pdf pdf_icon

AP65WN1K0I

AP65WN1K5S Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 650V D Simple Drive Requirement RDS(ON) 1.5 Fast Switching Characteristic ID3 6A G RoHS Compliant & Halogen-Free S Description AP65WN1K5 series are from the innovated design and silicon process technology to achieve the lowest possible on-re

 6.2. Size:59K  ape
ap65wn1k5i.pdf pdf_icon

AP65WN1K0I

AP65WN1K5I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 650V D Simple Drive Requirement RDS(ON) 1.5 Fast Switching Characteristic ID3 6A G RoHS Compliant & Halogen-Free S Description AP65WN1K5 series are from the innovated design and silicon process technology to achieve the lowest possible on-re

 8.1. Size:175K  ape
ap65wn770i.pdf pdf_icon

AP65WN1K0I

AP65WN770I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 650V D Simple Drive Requirement RDS(ON) 0.77 Fast Switching Characteristic ID3 10A G RoHS Compliant & Halogen-Free S Description AP65WN770 series are from the innovated design and silicon process technology to achieve the lowest possible on-

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History: SI3900DV

 

 

 

 

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