AP65WN1K0I Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP65WN1K0I
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 34.7 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 17 ns
Cossⓘ - Выходная емкость: 59 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
Тип корпуса: TO220F
- подбор MOSFET транзистора по параметрам
AP65WN1K0I Datasheet (PDF)
ap65wn1k0i.pdf

AP65WN1K0IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 1 Fast Switching Characteristic ID3 8AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN1K0 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-resi
ap65wn1k5s.pdf

AP65WN1K5SHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 1.5 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re
ap65wn1k5i.pdf

AP65WN1K5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 1.5 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re
ap65wn770i.pdf

AP65WN770IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 0.77 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP65WN770 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: 2SK3403 | AP10TN012LMT | CEU3252 | IRHY57133CMSE | SFG130N15PF | SI2302DS-T1-GE3 | 2SK2882
History: 2SK3403 | AP10TN012LMT | CEU3252 | IRHY57133CMSE | SFG130N15PF | SI2302DS-T1-GE3 | 2SK2882



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