AP65SL600DI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP65SL600DI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 27.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 27 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO220F

Búsqueda de reemplazo de MOSFET AP65SL600DI

AP65SL600DI Datasheet (PDF)

..1. Size:214K ape
ap65sl600di.pdf

AP65SL600DIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 7AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL600D series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

4.1. Size:237K ape
ap65sl600dh.pdf

AP65SL600DHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL600D series are from Advanced Power innovated design andGDsilicon process technology to achieve t

5.1. Size:215K ape
ap65sl600ai.pdf

AP65SL600AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 7AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL600A series are from Advanced Power innovated design andsilicon process technology to achieve

5.2. Size:237K ape
ap65sl600ah.pdf

AP65SL600AHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 7AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL600A series are from Advanced Power innovated design andGsilicon process technology to achie

5.3. Size:202K ape
ap65sl600aj.pdf

AP65SL600AJHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 7AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL600A series are from Advanced Power innovated design and GDSTO-251(J)silicon process tec

5.4. Size:202K ape
ap65sl600ar.pdf

AP65SL600ARHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL600A series are from Advanced Power innovated design andsilicon process technology to achieve

5.5. Size:251K ape
ap65sl600ain.pdf

AP65SL600AINHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 7AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL600A series are from Advanced Power innovated design andsilicon process technology to achieve

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: