AP65SL600AI Todos los transistores

 

AP65SL600AI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP65SL600AI

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 27.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 28 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO220F

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AP65SL600AI datasheet

 ..1. Size:215K  ape
ap65sl600ai.pdf pdf_icon

AP65SL600AI

AP65SL600AI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700V D Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 7A G RoHS Compliant & Halogen-Free S Description AP65SL600A series are from Advanced Power innovated design and silicon process technology to achieve

 0.1. Size:251K  ape
ap65sl600ain.pdf pdf_icon

AP65SL600AI

AP65SL600AIN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700V D Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 7A G RoHS Compliant & Halogen-Free S Description AP65SL600A series are from Advanced Power innovated design and silicon process technology to achieve

 4.1. Size:237K  ape
ap65sl600ah.pdf pdf_icon

AP65SL600AI

AP65SL600AH Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700V D Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 7A G RoHS Compliant & Halogen-Free S Description AP65SL600A series are from Advanced Power innovated design and G silicon process technology to achie

 4.2. Size:202K  ape
ap65sl600aj.pdf pdf_icon

AP65SL600AI

AP65SL600AJ Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700V D Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 7A G RoHS Compliant & Halogen-Free S Description AP65SL600A series are from Advanced Power innovated design and G D S TO-251(J) silicon process tec

Otros transistores... AP65WN1K5S , AP65WN1K5I , AP65WN1K0I , AP65SL600DI , AP65SL600DH , AP65SL600AR , AP65SL600AJ , AP65SL600AIN , IRF3710 , AP65SL600AH , AP65SL380DI , AP65SL380DH , AP65SL380BR , AP65SL380BI , AP65SL380AIN , AP65SL380AI , AP65SL380AH .

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History: BUK9Y7R2-60E

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