AP65SL190AIN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP65SL190AIN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 55 nC
   trⓘ - Tiempo de subida: 29 nS
   Cossⓘ - Capacitancia de salida: 62 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO220F-NL

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AP65SL190AIN Datasheet (PDF)

..1. Size:256K ape
ap65sl190ain.pdf

AP65SL190AINHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3,4 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190A series are from Advanced Power innovated designand silicon process technology to ac

3.1. Size:219K ape
ap65sl190ai.pdf

AP65SL190AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3,4 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190A series are from Advanced Power innovated designand silicon process technology to ach

4.1. Size:201K ape
ap65sl190awl.pdf

AP65SL190AWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190A series are from Advanced Power innovated design andsilicon process technology to achi

4.2. Size:166K ape
ap65sl190ap.pdf

AP65SL190APHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190A series are from Advanced Power innovated design andsilicon process technology to achie

4.3. Size:169K ape
ap65sl190ar.pdf

AP65SL190ARHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190A series are from Advanced Power innovated design andsilicon process technology to achieve the l

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