AP65SL105AFS
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP65SL105AFS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 277.8
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 650
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 30.8
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 33
nS
Cossⓘ - Capacitancia
de salida: 115
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.105
Ohm
Paquete / Cubierta:
TO263
- Selección de transistores por parámetros
AP65SL105AFS
Datasheet (PDF)
..1. Size:214K ape
ap65sl105afs.pdf 
AP65SL105AFSHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 105m Simple Drive Requirement ID3 30.8AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL105AF series are from Advanced Power innovated designand silicon process technology to achieve t
3.1. Size:241K ape
ap65sl105afwl.pdf 
AP65SL105AFWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 105m Simple Drive Requirement ID3 30.8AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL105AF series are from Advanced Power innovated designand silicon process technology to achieve
7.1. Size:201K ape
ap65sl190dp.pdf 
AP65SL190DPHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3,4 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190D series are from Advanced Power innovated designand silicon process technology to achieve the
7.2. Size:201K ape
ap65sl190awl.pdf 
AP65SL190AWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190A series are from Advanced Power innovated design andsilicon process technology to achi
7.3. Size:166K ape
ap65sl190ap.pdf 
AP65SL190APHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190A series are from Advanced Power innovated design andsilicon process technology to achie
7.4. Size:169K ape
ap65sl130ar.pdf 
AP65SL130ARHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130A series are from Advanced Power innovated designand silicon process technology to achieve the
7.5. Size:221K ape
ap65sl130ai.pdf 
AP65SL130AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3,4 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130A series are from Advanced Power innovated design andsilicon process technology to a
7.6. Size:256K ape
ap65sl190ain.pdf 
AP65SL190AINHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3,4 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190A series are from Advanced Power innovated designand silicon process technology to ac
7.7. Size:205K ape
ap65sl130awl.pdf 
AP65SL130AWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130A series are from Advanced Power innovated design andsilicon process technology to ac
7.8. Size:219K ape
ap65sl190ai.pdf 
AP65SL190AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3,4 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190A series are from Advanced Power innovated designand silicon process technology to ach
7.9. Size:202K ape
ap65sl190dwl.pdf 
AP65SL190DWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Low trr / Qrr RDS(ON) 0.19 Simple Drive Requirement ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190D series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible
7.10. Size:169K ape
ap65sl190ar.pdf 
AP65SL190ARHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190A series are from Advanced Power innovated design andsilicon process technology to achieve the l
7.11. Size:218K ape
ap65sl145afi.pdf 
AP65SL145AFIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.145 Simple Drive Requirement ID3 21AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL145AF series are from Advanced Power innovated designand silicon process technology to achieve th
7.12. Size:108K ape
ap65sl190dr.pdf 
AP65SL190DRHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Low trr / Qrr RDS(ON) 0.19 Simple Drive Requirement ID3,4 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190D series are from Advanced Power innovated designand silicon process technology to achieve the lowest possible
7.13. Size:217K ape
ap65sl190di.pdf 
AP65SL190DIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3,4 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190D series are from Advanced Power innovated designand silicon process technology to achieve the
7.14. Size:166K ape
ap65sl130ap.pdf 
AP65SL130APHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130A series are from Advanced Power innovated designand silicon process technology to achi
7.15. Size:218K ape
ap65sl130di.pdf 
AP65SL130DIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3,4 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130D series are from Advanced Power innovated design andsilicon process technology to achieve t
7.16. Size:202K ape
ap65sl130dp.pdf 
AP65SL130DPHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3,4 26.2AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL130D series are from Advanced Power innovated design andsilicon process technology to achieve t
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