AP65SL105AFS Todos los transistores

 

AP65SL105AFS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP65SL105AFS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 277.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm
   Paquete / Cubierta: TO263
 

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AP65SL105AFS Datasheet (PDF)

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AP65SL105AFS

AP65SL105AFSHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 105m Simple Drive Requirement ID3 30.8AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL105AF series are from Advanced Power innovated designand silicon process technology to achieve t

 3.1. Size:241K  ape
 ap65sl105afwl.pdf pdf_icon

AP65SL105AFS

AP65SL105AFWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 105m Simple Drive Requirement ID3 30.8AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL105AF series are from Advanced Power innovated designand silicon process technology to achieve

 7.1. Size:201K  ape
 ap65sl190dp.pdf pdf_icon

AP65SL105AFS

AP65SL190DPHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3,4 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190D series are from Advanced Power innovated designand silicon process technology to achieve the

 7.2. Size:201K  ape
 ap65sl190awl.pdf pdf_icon

AP65SL105AFS

AP65SL190AWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190A series are from Advanced Power innovated design andsilicon process technology to achi

MOSTRAR MÁS

Otros transistores... AP65SL145AFI , AP65SL130DP , AP65SL130DI , AP65SL130AWL , AP65SL130AR , AP65SL130AP , AP65SL130AI , AP65SL105AFWL , 4N60 , AP65SL099DWL , AP65SL099DR , AP65SL099DI , AP65SL099AWL , AP65SL099AS , AP65SL045AFWL , AP65SL041AWL , AP65PN2R6P .

History: HTD1K5N10 | QM3014M6 | BL7N60A-D

 

 
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