AP65SL105AFS MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AP65SL105AFS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP65SL105AFS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 277.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 33 nS

Cossⓘ - Capacitancia de salida: 115 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm

Encapsulados: TO263

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AP65SL105AFS datasheet

..1. Size:214K ape
ap65sl105afs.pdf pdf_icon

AP65SL105AFS Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 105m Simple Drive Requirement ID3 30.8A G RoHS Compliant & Halogen-Free S Description AP65SL105AF series are from Advanced Power innovated design and silicon process technology to achieve t

3.1. Size:241K ape
ap65sl105afwl.pdf pdf_icon

AP65SL105AFWL Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 105m Simple Drive Requirement ID3 30.8A G RoHS Compliant & Halogen-Free S Description AP65SL105AF series are from Advanced Power innovated design and silicon process technology to achieve

7.1. Size:201K ape
ap65sl190dp.pdf pdf_icon

AP65SL190DP Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3,4 20A G RoHS Compliant & Halogen-Free S Description AP65SL190D series are from Advanced Power innovated design and silicon process technology to achieve the

7.2. Size:201K ape
ap65sl190awl.pdf pdf_icon

AP65SL190AWL Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700V D Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3 20A G RoHS Compliant & Halogen-Free S Description AP65SL190A series are from Advanced Power innovated design and silicon process technology to achi