AP65SL105AFS. Аналоги и основные параметры
Наименование производителя: AP65SL105AFS
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 277.8 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 30.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 33 ns
Cossⓘ - Выходная емкость: 115 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.105 Ohm
Тип корпуса: TO263
Аналог (замена) для AP65SL105AFS
- подборⓘ MOSFET транзистора по параметрам
AP65SL105AFS даташит
..1. Size:214K ape
ap65sl105afs.pdf 

AP65SL105AFS Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 105m Simple Drive Requirement ID3 30.8A G RoHS Compliant & Halogen-Free S Description AP65SL105AF series are from Advanced Power innovated design and silicon process technology to achieve t
3.1. Size:241K ape
ap65sl105afwl.pdf 

AP65SL105AFWL Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 105m Simple Drive Requirement ID3 30.8A G RoHS Compliant & Halogen-Free S Description AP65SL105AF series are from Advanced Power innovated design and silicon process technology to achieve
7.1. Size:201K ape
ap65sl190dp.pdf 

AP65SL190DP Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3,4 20A G RoHS Compliant & Halogen-Free S Description AP65SL190D series are from Advanced Power innovated design and silicon process technology to achieve the
7.2. Size:201K ape
ap65sl190awl.pdf 

AP65SL190AWL Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700V D Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3 20A G RoHS Compliant & Halogen-Free S Description AP65SL190A series are from Advanced Power innovated design and silicon process technology to achi
7.3. Size:166K ape
ap65sl190ap.pdf 

AP65SL190AP Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700V D Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3 20A G RoHS Compliant & Halogen-Free S Description AP65SL190A series are from Advanced Power innovated design and silicon process technology to achie
7.4. Size:169K ape
ap65sl130ar.pdf 

AP65SL130AR Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID 26.2A G RoHS Compliant & Halogen-Free S Description AP65SL130A series are from Advanced Power innovated design and silicon process technology to achieve the
7.5. Size:221K ape
ap65sl130ai.pdf 

AP65SL130AI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700V D Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3,4 26.2A G RoHS Compliant & Halogen-Free S Description AP65SL130A series are from Advanced Power innovated design and silicon process technology to a
7.6. Size:256K ape
ap65sl190ain.pdf 

AP65SL190AIN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700V D Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3,4 20A G RoHS Compliant & Halogen-Free S Description AP65SL190A series are from Advanced Power innovated design and silicon process technology to ac
7.7. Size:205K ape
ap65sl130awl.pdf 

AP65SL130AWL Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700V D Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3 26.2A G RoHS Compliant & Halogen-Free S Description AP65SL130A series are from Advanced Power innovated design and silicon process technology to ac
7.8. Size:219K ape
ap65sl190ai.pdf 

AP65SL190AI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700V D Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3,4 20A G RoHS Compliant & Halogen-Free S Description AP65SL190A series are from Advanced Power innovated design and silicon process technology to ach
7.9. Size:202K ape
ap65sl190dwl.pdf 

AP65SL190DWL Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Low trr / Qrr RDS(ON) 0.19 Simple Drive Requirement ID3 20A G RoHS Compliant & Halogen-Free S Description AP65SL190D series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible
7.10. Size:169K ape
ap65sl190ar.pdf 

AP65SL190AR Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3 20A G RoHS Compliant & Halogen-Free S Description AP65SL190A series are from Advanced Power innovated design and silicon process technology to achieve the l
7.11. Size:218K ape
ap65sl145afi.pdf 

AP65SL145AFI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 0.145 Simple Drive Requirement ID3 21A G RoHS Compliant & Halogen-Free S Description AP65SL145AF series are from Advanced Power innovated design and silicon process technology to achieve th
7.12. Size:108K ape
ap65sl190dr.pdf 

AP65SL190DR Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Low trr / Qrr RDS(ON) 0.19 Simple Drive Requirement ID3,4 20A G RoHS Compliant & Halogen-Free S Description AP65SL190D series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible
7.13. Size:217K ape
ap65sl190di.pdf 

AP65SL190DI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3,4 20A G RoHS Compliant & Halogen-Free S Description AP65SL190D series are from Advanced Power innovated design and silicon process technology to achieve the
7.14. Size:166K ape
ap65sl130ap.pdf 

AP65SL130AP Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700V D Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID 26.2A G RoHS Compliant & Halogen-Free S Description AP65SL130A series are from Advanced Power innovated design and silicon process technology to achi
7.15. Size:218K ape
ap65sl130di.pdf 

AP65SL130DI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3,4 26.2A G RoHS Compliant & Halogen-Free S Description AP65SL130D series are from Advanced Power innovated design and silicon process technology to achieve t
7.16. Size:202K ape
ap65sl130dp.pdf 

AP65SL130DP Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 0.13 Simple Drive Requirement ID3,4 26.2A G RoHS Compliant & Halogen-Free S Description AP65SL130D series are from Advanced Power innovated design and silicon process technology to achieve t
Другие MOSFET... AP65SL145AFI
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History: AP65SL105AFWL
| WMB80N06TS
| AP65SL045AFWL
| AO4407A