AP65SL099AS Todos los transistores

 

AP65SL099AS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP65SL099AS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 277.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 38 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 114 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.099 Ohm

Encapsulados: TO263

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AP65SL099AS datasheet

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 ap65sl099as.pdf pdf_icon

AP65SL099AS

AP65SL099AS Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 99m Simple Drive Requirement ID3 38A G RoHS Compliant & Halogen-Free S Description AP65SL099A series are from Advanced Power innovated design and silicon process technology to achieve the lo

 4.1. Size:245K  ape
 ap65sl099awl.pdf pdf_icon

AP65SL099AS

AP65SL099AWL Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700V D Fast Switching Characteristic RDS(ON) 99m Simple Drive Requirement ID3 38A G RoHS Compliant & Halogen-Free S Description AP65SL099A series are from Advanced Power innovated design and silicon process technology to achie

 5.1. Size:242K  ape
 ap65sl099dwl.pdf pdf_icon

AP65SL099AS

AP65SL099DWL Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 99m Simple Drive Requirement ID3 38A G RoHS Compliant & Halogen-Free S Description AP65SL099D series are from Advanced Power innovated design and silicon process technology to achieve the l

 5.2. Size:206K  ape
 ap65sl099dr.pdf pdf_icon

AP65SL099AS

AP65SL099DR Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Low trr / Qrr RDS(ON) 99m Simple Drive Requirement ID3 38A G RoHS Compliant & Halogen-Free S Description AP65SL099D series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on

MOSTRAR MÁS

Otros transistores... AP65SL130AP, AP65SL130AI, AP65SL105AFWL, AP65SL105AFS, AP65SL099DWL, AP65SL099DR, AP65SL099DI, AP65SL099AWL, IRF530, AP65SL045AFWL, AP65SL041AWL, AP65PN2R6P, AP65PN2R6L, AP65PN2R6I, AP65PN2R6H, AP65PN2R5I, AP65PN1R4P

 

 

 

 

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