AP65PN2R5I Todos los transistores

 

AP65PN2R5I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP65PN2R5I

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 30 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm

Encapsulados: TO220F

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AP65PN2R5I datasheet

 ..1. Size:213K  ape
 ap65pn2r5i.pdf pdf_icon

AP65PN2R5I

AP65PN2R5I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 650V D Simple Drive Requirement RDS(ON) 2.5 Fast Switching Characteristic ID3 4A G RoHS Compliant & Halogen-Free S Description AP65PN2R5 series are from the innovated design and silicon process technology to achieve the lowest possible on-re

 6.1. Size:212K  ape
 ap65pn2r6i.pdf pdf_icon

AP65PN2R5I

AP65PN2R6I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5A G RoHS Compliant & Halogen-Free S Description AP65PN2R6 series are from Advanced Power innovated design and silicon process technology to achieve the low

 6.2. Size:91K  ape
 ap65pn2r6l.pdf pdf_icon

AP65PN2R5I

AP65PN2R6L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5A G RoHS Compliant & Halogen-Free S Description AP65PN2R6 series are from Advanced Power innovated design and silicon process technology to achieve the low

 6.3. Size:198K  ape
 ap65pn2r6h.pdf pdf_icon

AP65PN2R5I

AP65PN2R6H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5A G RoHS Compliant & Halogen-Free S Description AP65PN2R6 series are from Advanced Power innovated design and G silicon process technology to achieve the

MOSTRAR MÁS

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