AP65PN2R5I Todos los transistores

 

AP65PN2R5I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP65PN2R5I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO220F
 

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AP65PN2R5I Datasheet (PDF)

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 ap65pn2r5i.pdf pdf_icon

AP65PN2R5I

AP65PN2R5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 2.5 Fast Switching Characteristic ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP65PN2R5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re

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AP65PN2R5I

AP65PN2R6IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5AG RoHS Compliant & Halogen-FreeSDescriptionAP65PN2R6 series are from Advanced Power innovated design andsilicon process technology to achieve the low

 6.2. Size:91K  ape
 ap65pn2r6l.pdf pdf_icon

AP65PN2R5I

AP65PN2R6LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5AG RoHS Compliant & Halogen-FreeSDescriptionAP65PN2R6 series are from Advanced Power innovated design andsilicon process technology to achieve the low

 6.3. Size:198K  ape
 ap65pn2r6h.pdf pdf_icon

AP65PN2R5I

AP65PN2R6HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5AG RoHS Compliant & Halogen-FreeSDescriptionAP65PN2R6 series are from Advanced Power innovated design andGsilicon process technology to achieve the

MOSTRAR MÁS

Otros transistores... AP65SL099AWL , AP65SL099AS , AP65SL045AFWL , AP65SL041AWL , AP65PN2R6P , AP65PN2R6L , AP65PN2R6I , AP65PN2R6H , P60NF06 , AP65PN1R4P , AP60WN720IN , AP60WN720I , AP60WN650I , AP60WN4K9P , AP60WN4K9J , AP60WN4K9I , AP60WN4K9H .

History: BSC096N10LS5 | STD100NH02LT4 | RSM5853P | NCE65NF068LL | IPD80R280P7 | IXTM10N60 | SM6A24NSU

 

 
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