AP65PN2R5I - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP65PN2R5I
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 31.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 30 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm
Тип корпуса: TO220F
Аналог (замена) для AP65PN2R5I
AP65PN2R5I Datasheet (PDF)
ap65pn2r5i.pdf
AP65PN2R5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 2.5 Fast Switching Characteristic ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP65PN2R5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re
ap65pn2r6i.pdf
AP65PN2R6IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5AG RoHS Compliant & Halogen-FreeSDescriptionAP65PN2R6 series are from Advanced Power innovated design andsilicon process technology to achieve the low
ap65pn2r6l.pdf
AP65PN2R6LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5AG RoHS Compliant & Halogen-FreeSDescriptionAP65PN2R6 series are from Advanced Power innovated design andsilicon process technology to achieve the low
ap65pn2r6h.pdf
AP65PN2R6HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5AG RoHS Compliant & Halogen-FreeSDescriptionAP65PN2R6 series are from Advanced Power innovated design andGsilicon process technology to achieve the
Другие MOSFET... AP65SL099AWL , AP65SL099AS , AP65SL045AFWL , AP65SL041AWL , AP65PN2R6P , AP65PN2R6L , AP65PN2R6I , AP65PN2R6H , AO4407 , AP65PN1R4P , AP60WN720IN , AP60WN720I , AP60WN650I , AP60WN4K9P , AP60WN4K9J , AP60WN4K9I , AP60WN4K9H .
History: NTMFS5830NLT1G | AP60WN4K9P | STU16N65M5 | 2SK3930-01SJ | DMN100 | HMS11N70K | HMS15N60
History: NTMFS5830NLT1G | AP60WN4K9P | STU16N65M5 | 2SK3930-01SJ | DMN100 | HMS11N70K | HMS15N60
Список транзисторов
Обновления
MOSFET: AGM610MN | AGM610M | AGM60P90D | AGM60P90A | AGM60P85E | AGM60P85D | AGM60P85AP | AGM60P40D | AGM60P40A | AGM60P35F | AGM60P30D | AGM60P30C | AGM60P30AP | AGM60P30A | AGM406MNQ | AGM406MNA
Popular searches
2sc1312 datasheet | 2sb647 | k3561 transistor | c3203 transistor | irfp450 equivalent | 2sb649 | 2sb324 transistor | b754 transistor






