AP65PN1R4P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP65PN1R4P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 104 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 44 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.45 Ohm

Encapsulados: TO220

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AP65PN1R4P datasheet

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 ap65pn1r4p.pdf pdf_icon

AP65PN1R4P

AP65PN1R4P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 1.45 Simple Drive Requirement ID 7A G RoHS Compliant & Halogen-Free S Description AP65PN1R4 series are from Advanced Power innovated design and silicon process technology to achieve the lowes

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 ap65pn2r6i.pdf pdf_icon

AP65PN1R4P

AP65PN2R6I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5A G RoHS Compliant & Halogen-Free S Description AP65PN2R6 series are from Advanced Power innovated design and silicon process technology to achieve the low

 8.2. Size:213K  ape
 ap65pn2r5i.pdf pdf_icon

AP65PN1R4P

AP65PN2R5I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 650V D Simple Drive Requirement RDS(ON) 2.5 Fast Switching Characteristic ID3 4A G RoHS Compliant & Halogen-Free S Description AP65PN2R5 series are from the innovated design and silicon process technology to achieve the lowest possible on-re

 8.3. Size:91K  ape
 ap65pn2r6l.pdf pdf_icon

AP65PN1R4P

AP65PN2R6L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5A G RoHS Compliant & Halogen-Free S Description AP65PN2R6 series are from Advanced Power innovated design and silicon process technology to achieve the low

MOSTRAR MÁS

Otros transistores... AP65SL099AS, AP65SL045AFWL, AP65SL041AWL, AP65PN2R6P, AP65PN2R6L, AP65PN2R6I, AP65PN2R6H, AP65PN2R5I, BS170, AP60WN720IN, AP60WN720I, AP60WN650I, AP60WN4K9P, AP60WN4K9J, AP60WN4K9I, AP60WN4K9H, AP60WN4K5I