Справочник MOSFET. AP65PN1R4P

 

AP65PN1R4P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP65PN1R4P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 104 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 44 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.45 Ohm
   Тип корпуса: TO220

 Аналог (замена) для AP65PN1R4P

 

 

AP65PN1R4P Datasheet (PDF)

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 ap65pn1r4p.pdf

AP65PN1R4P AP65PN1R4P

AP65PN1R4PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 1.45 Simple Drive Requirement ID 7AG RoHS Compliant & Halogen-FreeSDescriptionAP65PN1R4 series are from Advanced Power innovated design andsilicon process technology to achieve the lowes

 8.1. Size:212K  ape
 ap65pn2r6i.pdf

AP65PN1R4P AP65PN1R4P

AP65PN2R6IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5AG RoHS Compliant & Halogen-FreeSDescriptionAP65PN2R6 series are from Advanced Power innovated design andsilicon process technology to achieve the low

 8.2. Size:213K  ape
 ap65pn2r5i.pdf

AP65PN1R4P AP65PN1R4P

AP65PN2R5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 650VD Simple Drive Requirement RDS(ON) 2.5 Fast Switching Characteristic ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP65PN2R5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re

 8.3. Size:91K  ape
 ap65pn2r6l.pdf

AP65PN1R4P AP65PN1R4P

AP65PN2R6LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5AG RoHS Compliant & Halogen-FreeSDescriptionAP65PN2R6 series are from Advanced Power innovated design andsilicon process technology to achieve the low

 8.4. Size:198K  ape
 ap65pn2r6h.pdf

AP65PN1R4P AP65PN1R4P

AP65PN2R6HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5AG RoHS Compliant & Halogen-FreeSDescriptionAP65PN2R6 series are from Advanced Power innovated design andGsilicon process technology to achieve the

 8.5. Size:65K  ape
 ap65pn2r6p.pdf

AP65PN1R4P AP65PN1R4P

AP65PN2R6PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5AG RoHS Compliant & Halogen-FreeSDescriptionAP65PN2R6 series are from Advanced Power innovated design andsilicon process technology to achieve the low

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