AP60WN720I Todos los transistores

 

AP60WN720I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP60WN720I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 36.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.72 Ohm
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

AP60WN720I Datasheet (PDF)

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AP60WN720I

AP60WN720IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 0.72 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN720 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-

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AP60WN720I

AP60WN720INHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 0.72 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN720 series are from the innovated design and siliconprocess technology to achieve the lowest possible on

 8.1. Size:198K  ape
ap60wn4k9h.pdf pdf_icon

AP60WN720I

AP60WN4K9HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN4K9 series are from the innovated design and siliconGprocess technology to achieve the lowest possible on

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ap60wn4k5i.pdf pdf_icon

AP60WN720I

AP60WN4K5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.5 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN4K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRFPG20 | IRF7457PBF | AOK60N30L | VS40200AD | SPP100N08S2L-07 | IRFS820B | AP9972AGR-HF

 

 
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