AP60WN650I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP60WN650I
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 39 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 31 nS
Cossⓘ - Capacitancia de salida: 85 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de AP60WN650I MOSFET
- Selecciónⓘ de transistores por parámetros
AP60WN650I datasheet
..1. Size:176K ape
ap60wn650i.pdf 
AP60WN650I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 0.65 Fast Switching Characteristic ID3 11A G RoHS Compliant & Halogen-Free S Description AP60WN650 series are from the innovated design and silicon process technology to achieve the lowest possible on-
8.1. Size:198K ape
ap60wn4k9h.pdf
AP60WN4K9H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description AP60WN4K9 series are from the innovated design and silicon G process technology to achieve the lowest possible on
8.2. Size:60K ape
ap60wn4k5i.pdf
AP60WN4K5I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.5 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description AP60WN4K5 series are from the innovated design and silicon process technology to achieve the lowest possible on-re
8.3. Size:198K ape
ap60wn2k1h.pdf
AP60WN2K1H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5A G RoHS Compliant & Halogen-Free S Description AP60WN2K1 series are from the innovated design and silicon G process technology to achieve the lowest possible o
8.4. Size:59K ape
ap60wn4k5h.pdf
AP60WN4K5H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.5 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description AP60WN4K5 series are from the innovated design and silicon G process technology to achieve the lowest possible on
8.5. Size:176K ape
ap60wn2k3i.pdf
AP60WN2K3I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 2.37 Fast Switching Characteristic ID3 4A G RoHS Compliant & Halogen-Free S Description AP60WN2K3 series are from the innovated design and silicon process technology to achieve the lowest possible on-r
8.6. Size:199K ape
ap60wn2k1j.pdf
AP60WN2K1J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5A G RoHS Compliant & Halogen-Free S Description G AP60WN2K1 series are from the innovated design and silicon D S TO-251(J) process technology to achieve the
8.7. Size:212K ape
ap60wn4k9i.pdf
AP60WN4K9I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description AP60WN4K9 series are from the innovated design and silicon process technology to achieve the lowest possible on-re
8.8. Size:199K ape
ap60wn4k9j.pdf
AP60WN4K9J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description G AP60WN4K9 series are from the innovated design and silicon D S TO-251(J) process technology to achieve the l
8.9. Size:211K ape
ap60wn720in.pdf
AP60WN720IN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 0.72 Fast Switching Characteristic ID3 10A G RoHS Compliant & Halogen-Free S Description AP60WN720 series are from the innovated design and silicon process technology to achieve the lowest possible on
8.10. Size:161K ape
ap60wn1k5j.pdf
AP60WN1K5J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 6A G RoHS Compliant & Halogen-Free S Description G AP60WN1K5 series are from the innovated design and silicon D S TO-251(J) process technology to achieve the
8.11. Size:59K ape
ap60wn1k2h.pdf
AP60WN1K2H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8A G RoHS Compliant & Halogen-Free S Description AP60WN1K2 series are from the innovated design and silicon G process technology to achieve the lowest possible on
8.12. Size:175K ape
ap60wn720i.pdf
AP60WN720I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 0.72 Fast Switching Characteristic ID3 10A G RoHS Compliant & Halogen-Free S Description AP60WN720 series are from the innovated design and silicon process technology to achieve the lowest possible on-
8.13. Size:196K ape
ap60wn1k5h.pdf
AP60WN1K5H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 6A G RoHS Compliant & Halogen-Free S Description AP60WN1K5 series are from the innovated design and silicon G process technology to achieve the lowest possible o
8.14. Size:174K ape
ap60wn1k5i.pdf
AP60WN1K5I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 6A G RoHS Compliant & Halogen-Free S Description AP60WN1K5 series are from the innovated design and silicon process technology to achieve the lowest possible on-r
8.15. Size:211K ape
ap60wn1k2in.pdf
AP60WN1K2IN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8A G RoHS Compliant & Halogen-Free S Description AP60WN1K2 series are from the innovated design and silicon process technology to achieve the lowest possible on-r
8.16. Size:59K ape
ap60wn1k2j.pdf
AP60WN1K2J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8A G RoHS Compliant & Halogen-Free S Description G AP60WN1K2 series are from the innovated design and silicon D S TO-251(J) process technology to achieve the l
8.17. Size:198K ape
ap60wn2k3h.pdf
AP60WN2K3H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 2.37 Fast Switching Characteristic ID3 4A G RoHS Compliant & Halogen-Free S Description AP60WN2K3 series are from the innovated design and silicon G process technology to achieve the lowest possible o
8.18. Size:135K ape
ap60wn4k9k.pdf
AP60WN4K9K Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S D Description S AP60WN4K9 series are from the innovated design and silicon D process technology to achieve the lowest possi
8.19. Size:160K ape
ap60wn4k9p.pdf
AP60WN4K9P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description AP60WN4K9 series are from the innovated design and silicon process technology to achieve the lowest possible on-re
8.20. Size:213K ape
ap60wn2k1i.pdf
AP60WN2K1I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5A G RoHS Compliant & Halogen-Free S Description AP60WN2K1 series are from the innovated design and silicon process technology to achieve the lowest possible on-r
Otros transistores... AP65PN2R6P, AP65PN2R6L, AP65PN2R6I, AP65PN2R6H, AP65PN2R5I, AP65PN1R4P, AP60WN720IN, AP60WN720I, IRF1407, AP60WN4K9P, AP60WN4K9J, AP60WN4K9I, AP60WN4K9H, AP60WN4K5I, AP60WN4K5H, AP60WN2K3I, AP60WN2K3H
