All MOSFET. AP60WN650I Datasheet

 

AP60WN650I MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP60WN650I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 47 nC
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO220F

 AP60WN650I Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP60WN650I Datasheet (PDF)

 ..1. Size:176K  ape
ap60wn650i.pdf

AP60WN650I
AP60WN650I

AP60WN650IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 0.65 Fast Switching Characteristic ID3 11AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN650 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-

 8.1. Size:198K  ape
ap60wn4k9h.pdf

AP60WN650I
AP60WN650I

AP60WN4K9HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN4K9 series are from the innovated design and siliconGprocess technology to achieve the lowest possible on

 8.2. Size:60K  ape
ap60wn4k5i.pdf

AP60WN650I
AP60WN650I

AP60WN4K5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.5 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN4K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re

 8.3. Size:198K  ape
ap60wn2k1h.pdf

AP60WN650I
AP60WN650I

AP60WN2K1HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN2K1 series are from the innovated design and siliconGprocess technology to achieve the lowest possible o

 8.4. Size:59K  ape
ap60wn4k5h.pdf

AP60WN650I
AP60WN650I

AP60WN4K5HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.5 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN4K5 series are from the innovated design and siliconGprocess technology to achieve the lowest possible on

 8.5. Size:176K  ape
ap60wn2k3i.pdf

AP60WN650I
AP60WN650I

AP60WN2K3IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 2.37 Fast Switching Characteristic ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN2K3 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r

 8.6. Size:199K  ape
ap60wn2k1j.pdf

AP60WN650I
AP60WN650I

AP60WN2K1JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionGAP60WN2K1 series are from the innovated design and siliconDSTO-251(J)process technology to achieve the

 8.7. Size:212K  ape
ap60wn4k9i.pdf

AP60WN650I
AP60WN650I

AP60WN4K9IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN4K9 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re

 8.8. Size:199K  ape
ap60wn4k9j.pdf

AP60WN650I
AP60WN650I

AP60WN4K9JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionGAP60WN4K9 series are from the innovated design and siliconDSTO-251(J)process technology to achieve the l

 8.9. Size:211K  ape
ap60wn720in.pdf

AP60WN650I
AP60WN650I

AP60WN720INHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 0.72 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN720 series are from the innovated design and siliconprocess technology to achieve the lowest possible on

 8.10. Size:161K  ape
ap60wn1k5j.pdf

AP60WN650I
AP60WN650I

AP60WN1K5JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionGAP60WN1K5 series are from the innovated design and siliconDSTO-251(J)process technology to achieve the

 8.11. Size:59K  ape
ap60wn1k2h.pdf

AP60WN650I
AP60WN650I

AP60WN1K2HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN1K2 series are from the innovated design and siliconGprocess technology to achieve the lowest possible on

 8.12. Size:175K  ape
ap60wn720i.pdf

AP60WN650I
AP60WN650I

AP60WN720IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 0.72 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN720 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-

 8.13. Size:196K  ape
ap60wn1k5h.pdf

AP60WN650I
AP60WN650I

AP60WN1K5HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN1K5 series are from the innovated design and siliconGprocess technology to achieve the lowest possible o

 8.14. Size:174K  ape
ap60wn1k5i.pdf

AP60WN650I
AP60WN650I

AP60WN1K5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r

 8.15. Size:211K  ape
ap60wn1k2in.pdf

AP60WN650I
AP60WN650I

AP60WN1K2INHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN1K2 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r

 8.16. Size:59K  ape
ap60wn1k2j.pdf

AP60WN650I
AP60WN650I

AP60WN1K2JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8AG RoHS Compliant & Halogen-FreeSDescriptionGAP60WN1K2 series are from the innovated design and siliconDSTO-251(J)process technology to achieve the l

 8.17. Size:198K  ape
ap60wn2k3h.pdf

AP60WN650I
AP60WN650I

AP60WN2K3HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 2.37 Fast Switching Characteristic ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN2K3 series are from the innovated design and siliconGprocess technology to achieve the lowest possible o

 8.18. Size:135K  ape
ap60wn4k9k.pdf

AP60WN650I
AP60WN650I

AP60WN4K9KHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDDescriptionSAP60WN4K9 series are from the innovated design and siliconDprocess technology to achieve the lowest possi

 8.19. Size:160K  ape
ap60wn4k9p.pdf

AP60WN650I
AP60WN650I

AP60WN4K9PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN4K9 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re

 8.20. Size:213K  ape
ap60wn2k1i.pdf

AP60WN650I
AP60WN650I

AP60WN2K1IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN2K1 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top