AP60WN650I Specs and Replacement

Type Designator: AP60WN650I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: TO220F

AP60WN650I substitution

- MOSFET ⓘ Cross-Reference Search

 

AP60WN650I datasheet

 ..1. Size:176K  ape
ap60wn650i.pdf pdf_icon

AP60WN650I

AP60WN650I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 0.65 Fast Switching Characteristic ID3 11A G RoHS Compliant & Halogen-Free S Description AP60WN650 series are from the innovated design and silicon process technology to achieve the lowest possible on-... See More ⇒

 8.1. Size:198K  ape
ap60wn4k9h.pdf pdf_icon

AP60WN650I

AP60WN4K9H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description AP60WN4K9 series are from the innovated design and silicon G process technology to achieve the lowest possible on... See More ⇒

 8.2. Size:60K  ape
ap60wn4k5i.pdf pdf_icon

AP60WN650I

AP60WN4K5I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.5 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description AP60WN4K5 series are from the innovated design and silicon process technology to achieve the lowest possible on-re... See More ⇒

 8.3. Size:198K  ape
ap60wn2k1h.pdf pdf_icon

AP60WN650I

AP60WN2K1H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5A G RoHS Compliant & Halogen-Free S Description AP60WN2K1 series are from the innovated design and silicon G process technology to achieve the lowest possible o... See More ⇒

Detailed specifications: AP65PN2R6P, AP65PN2R6L, AP65PN2R6I, AP65PN2R6H, AP65PN2R5I, AP65PN1R4P, AP60WN720IN, AP60WN720I, IRF1407, AP60WN4K9P, AP60WN4K9J, AP60WN4K9I, AP60WN4K9H, AP60WN4K5I, AP60WN4K5H, AP60WN2K3I, AP60WN2K3H

Keywords - AP60WN650I MOSFET specs

 AP60WN650I cross reference

 AP60WN650I equivalent finder

 AP60WN650I pdf lookup

 AP60WN650I substitution

 AP60WN650I replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs