AP60WN2K1J Todos los transistores

 

AP60WN2K1J MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP60WN2K1J
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 37 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.07 Ohm
   Paquete / Cubierta: TO251
 

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AP60WN2K1J Datasheet (PDF)

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AP60WN2K1J

AP60WN2K1JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionGAP60WN2K1 series are from the innovated design and siliconDSTO-251(J)process technology to achieve the

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AP60WN2K1J

AP60WN2K1HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN2K1 series are from the innovated design and siliconGprocess technology to achieve the lowest possible o

 5.2. Size:213K  ape
 ap60wn2k1i.pdf pdf_icon

AP60WN2K1J

AP60WN2K1IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN2K1 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r

 6.1. Size:176K  ape
 ap60wn2k3i.pdf pdf_icon

AP60WN2K1J

AP60WN2K3IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 2.37 Fast Switching Characteristic ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN2K3 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r

MOSTRAR MÁS

Otros transistores... AP60WN4K9P , AP60WN4K9J , AP60WN4K9I , AP60WN4K9H , AP60WN4K5I , AP60WN4K5H , AP60WN2K3I , AP60WN2K3H , CS150N03A8 , AP60WN2K1I , AP60WN2K1H , AP60WN1K5J , AP60WN1K5I , AP60WN1K5H , AP60WN1K2J , AP60WN1K2IN , AP60WN1K2H .

History: CS7807 | ELM321604A | TK13A50D | GP2M002A060XG | SSF11NS70UF | SI7682DP

 

 
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