AP60WN2K1J Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP60WN2K1J
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 19 ns
Cossⓘ - Выходная емкость: 37 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.07 Ohm
Тип корпуса: TO251
- подбор MOSFET транзистора по параметрам
AP60WN2K1J Datasheet (PDF)
ap60wn2k1j.pdf

AP60WN2K1JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionGAP60WN2K1 series are from the innovated design and siliconDSTO-251(J)process technology to achieve the
ap60wn2k1h.pdf

AP60WN2K1HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN2K1 series are from the innovated design and siliconGprocess technology to achieve the lowest possible o
ap60wn2k1i.pdf

AP60WN2K1IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN2K1 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r
ap60wn2k3i.pdf

AP60WN2K3IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 2.37 Fast Switching Characteristic ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN2K3 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: IPW60R299CP | JCS2N60MB | P0908ATF | 2SK2424 | CM20N50P | 2SK4108 | AP9997GP-HF
History: IPW60R299CP | JCS2N60MB | P0908ATF | 2SK2424 | CM20N50P | 2SK4108 | AP9997GP-HF



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