AP60WN2K1I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP60WN2K1I

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19 nS

Cossⓘ - Capacitancia de salida: 37 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.07 Ohm

Encapsulados: TO220F

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AP60WN2K1I datasheet

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 ap60wn2k1i.pdf pdf_icon

AP60WN2K1I

AP60WN2K1I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5A G RoHS Compliant & Halogen-Free S Description AP60WN2K1 series are from the innovated design and silicon process technology to achieve the lowest possible on-r

 5.1. Size:198K  ape
 ap60wn2k1h.pdf pdf_icon

AP60WN2K1I

AP60WN2K1H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5A G RoHS Compliant & Halogen-Free S Description AP60WN2K1 series are from the innovated design and silicon G process technology to achieve the lowest possible o

 5.2. Size:199K  ape
 ap60wn2k1j.pdf pdf_icon

AP60WN2K1I

AP60WN2K1J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5A G RoHS Compliant & Halogen-Free S Description G AP60WN2K1 series are from the innovated design and silicon D S TO-251(J) process technology to achieve the

 6.1. Size:176K  ape
 ap60wn2k3i.pdf pdf_icon

AP60WN2K1I

AP60WN2K3I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 2.37 Fast Switching Characteristic ID3 4A G RoHS Compliant & Halogen-Free S Description AP60WN2K3 series are from the innovated design and silicon process technology to achieve the lowest possible on-r

MOSTRAR MÁS

Otros transistores... AP60WN4K9J, AP60WN4K9I, AP60WN4K9H, AP60WN4K5I, AP60WN4K5H, AP60WN2K3I, AP60WN2K3H, AP60WN2K1J, IRF2807, AP60WN2K1H, AP60WN1K5J, AP60WN1K5I, AP60WN1K5H, AP60WN1K2J, AP60WN1K2IN, AP60WN1K2H, AP60SL650AFI