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AP60WN2K1I MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP60WN2K1I
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 31.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 19 ns
   Cossⓘ - Выходная емкость: 37 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.07 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для AP60WN2K1I

 

 

AP60WN2K1I Datasheet (PDF)

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 ap60wn2k1i.pdf

AP60WN2K1I AP60WN2K1I

AP60WN2K1IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN2K1 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r

 5.1. Size:198K  ape
 ap60wn2k1h.pdf

AP60WN2K1I AP60WN2K1I

AP60WN2K1HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN2K1 series are from the innovated design and siliconGprocess technology to achieve the lowest possible o

 5.2. Size:199K  ape
 ap60wn2k1j.pdf

AP60WN2K1I AP60WN2K1I

AP60WN2K1JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionGAP60WN2K1 series are from the innovated design and siliconDSTO-251(J)process technology to achieve the

 6.1. Size:176K  ape
 ap60wn2k3i.pdf

AP60WN2K1I AP60WN2K1I

AP60WN2K3IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 2.37 Fast Switching Characteristic ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN2K3 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r

 6.2. Size:198K  ape
 ap60wn2k3h.pdf

AP60WN2K1I AP60WN2K1I

AP60WN2K3HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 2.37 Fast Switching Characteristic ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN2K3 series are from the innovated design and siliconGprocess technology to achieve the lowest possible o

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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