AP60WN1K5I Todos los transistores

 

AP60WN1K5I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP60WN1K5I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 44 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.55 Ohm
   Paquete / Cubierta: TO220F
 

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AP60WN1K5I Datasheet (PDF)

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 ap60wn1k5i.pdf pdf_icon

AP60WN1K5I

AP60WN1K5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r

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AP60WN1K5I

AP60WN1K5JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionGAP60WN1K5 series are from the innovated design and siliconDSTO-251(J)process technology to achieve the

 5.2. Size:196K  ape
 ap60wn1k5h.pdf pdf_icon

AP60WN1K5I

AP60WN1K5HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN1K5 series are from the innovated design and siliconGprocess technology to achieve the lowest possible o

 6.1. Size:59K  ape
 ap60wn1k2h.pdf pdf_icon

AP60WN1K5I

AP60WN1K2HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN1K2 series are from the innovated design and siliconGprocess technology to achieve the lowest possible on

MOSTRAR MÁS

Otros transistores... AP60WN4K5I , AP60WN4K5H , AP60WN2K3I , AP60WN2K3H , AP60WN2K1J , AP60WN2K1I , AP60WN2K1H , AP60WN1K5J , IRF830 , AP60WN1K5H , AP60WN1K2J , AP60WN1K2IN , AP60WN1K2H , AP60SL650AFI , AP60SL650AFH , AP60SL600DI , AP60SL600DH .

History: CEM6659 | STD100NH02LT4 | RSM5853P | PMPB47XP | 2SK1465 | IXTM10N60 | SM6A24NSU

 

 
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