AP60WN1K2IN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP60WN1K2IN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 33.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm

Encapsulados: TO220F-NL

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AP60WN1K2IN datasheet

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 ap60wn1k2in.pdf pdf_icon

AP60WN1K2IN

AP60WN1K2IN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8A G RoHS Compliant & Halogen-Free S Description AP60WN1K2 series are from the innovated design and silicon process technology to achieve the lowest possible on-r

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 ap60wn1k2h.pdf pdf_icon

AP60WN1K2IN

AP60WN1K2H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8A G RoHS Compliant & Halogen-Free S Description AP60WN1K2 series are from the innovated design and silicon G process technology to achieve the lowest possible on

 5.2. Size:59K  ape
 ap60wn1k2j.pdf pdf_icon

AP60WN1K2IN

AP60WN1K2J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8A G RoHS Compliant & Halogen-Free S Description G AP60WN1K2 series are from the innovated design and silicon D S TO-251(J) process technology to achieve the l

 6.1. Size:161K  ape
 ap60wn1k5j.pdf pdf_icon

AP60WN1K2IN

AP60WN1K5J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 6A G RoHS Compliant & Halogen-Free S Description G AP60WN1K5 series are from the innovated design and silicon D S TO-251(J) process technology to achieve the

MOSTRAR MÁS

Otros transistores... AP60WN2K3H, AP60WN2K1J, AP60WN2K1I, AP60WN2K1H, AP60WN1K5J, AP60WN1K5I, AP60WN1K5H, AP60WN1K2J, 75N75, AP60WN1K2H, AP60SL650AFI, AP60SL650AFH, AP60SL600DI, AP60SL600DH, AP60SL600AJ, AP60SL600AIN, AP60SL600AI