AP60SL650AFI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP60SL650AFI

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 26 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 27 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm

Encapsulados: TO220F

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AP60SL650AFI datasheet

 ..1. Size:214K  ape
 ap60sl650afi.pdf pdf_icon

AP60SL650AFI

AP60SL650AFI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 0.65 Simple Drive Requirement ID3 5.8A G RoHS Compliant & Halogen-Free S Description AP60SL650AF series are from Advanced Power innovated design and silicon process technology to achieve th

 3.1. Size:236K  ape
 ap60sl650afh.pdf pdf_icon

AP60SL650AFI

AP60SL650AFH Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 0.65 Simple Drive Requirement ID3 5.8A G RoHS Compliant & Halogen-Free S Description AP60SL650AF series are from Advanced Power innovated design G and silicon process technology to achieve

 7.1. Size:201K  ape
 ap60sl600aj.pdf pdf_icon

AP60SL650AFI

AP60SL600AJ Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650V D Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3 7A G RoHS Compliant & Halogen-Free S Description G AP60SL600A series are from Advanced Power innovated design and D S TO-251(J) silicon process t

 7.2. Size:252K  ape
 ap60sl600ain.pdf pdf_icon

AP60SL650AFI

AP60SL600AIN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650V D Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3,4 7A G RoHS Compliant & Halogen-Free S Description AP60SL600A series are from Advanced Power innovated design and silicon process technology to achi

MOSTRAR MÁS

Otros transistores... AP60WN2K1I, AP60WN2K1H, AP60WN1K5J, AP60WN1K5I, AP60WN1K5H, AP60WN1K2J, AP60WN1K2IN, AP60WN1K2H, IRFB31N20D, AP60SL650AFH, AP60SL600DI, AP60SL600DH, AP60SL600AJ, AP60SL600AIN, AP60SL600AI, AP60SL600AH, AP60SL380AH