AP60SL650AFI - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP60SL650AFI
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 26 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 27 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm
Тип корпуса: TO220F
Аналог (замена) для AP60SL650AFI
AP60SL650AFI Datasheet (PDF)
ap60sl650afi.pdf

AP60SL650AFIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.65 Simple Drive Requirement ID3 5.8AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL650AF series are from Advanced Power innovated designand silicon process technology to achieve th
ap60sl650afh.pdf

AP60SL650AFHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.65 Simple Drive Requirement ID3 5.8AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL650AF series are from Advanced Power innovated designGand silicon process technology to achieve
ap60sl600aj.pdf

AP60SL600AJHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionGAP60SL600A series are from Advanced Power innovated design andDSTO-251(J)silicon process t
ap60sl600ain.pdf

AP60SL600AINHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3,4 7AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL600A series are from Advanced Power innovated design andsilicon process technology to achi
Другие MOSFET... AP60WN2K1I , AP60WN2K1H , AP60WN1K5J , AP60WN1K5I , AP60WN1K5H , AP60WN1K2J , AP60WN1K2IN , AP60WN1K2H , IRF730 , AP60SL650AFH , AP60SL600DI , AP60SL600DH , AP60SL600AJ , AP60SL600AIN , AP60SL600AI , AP60SL600AH , AP60SL380AH .
History: HM0565 | IXTA220N04T2-7 | FQD50P06 | AP55T06GI | TMB140N10A | HY12N65T | CEB02N65D
History: HM0565 | IXTA220N04T2-7 | FQD50P06 | AP55T06GI | TMB140N10A | HY12N65T | CEB02N65D



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