AP60SL600DH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP60SL600DH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 56.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 27 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO252

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AP60SL600DH datasheet

 ..1. Size:237K  ape
ap60sl600dh.pdf pdf_icon

AP60SL600DH

AP60SL600DH Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3 7A G RoHS Compliant & Halogen-Free S Description AP60SL600D series are from Advanced Power innovated design and G silicon process technology to achieve the

 4.1. Size:214K  ape
ap60sl600di.pdf pdf_icon

AP60SL600DH

AP60SL600DI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3,4 7A G RoHS Compliant & Halogen-Free S Description AP60SL600D series are from Advanced Power innovated design and silicon process technology to achieve the l

 5.1. Size:201K  ape
ap60sl600aj.pdf pdf_icon

AP60SL600DH

AP60SL600AJ Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650V D Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3 7A G RoHS Compliant & Halogen-Free S Description G AP60SL600A series are from Advanced Power innovated design and D S TO-251(J) silicon process t

 5.2. Size:252K  ape
ap60sl600ain.pdf pdf_icon

AP60SL600DH

AP60SL600AIN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650V D Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3,4 7A G RoHS Compliant & Halogen-Free S Description AP60SL600A series are from Advanced Power innovated design and silicon process technology to achi

Otros transistores... AP60WN1K5I, AP60WN1K5H, AP60WN1K2J, AP60WN1K2IN, AP60WN1K2H, AP60SL650AFI, AP60SL650AFH, AP60SL600DI, 7N60, AP60SL600AJ, AP60SL600AIN, AP60SL600AI, AP60SL600AH, AP60SL380AH, AP60SL300AFI, AP60SL280DI, AP60SL280AIN