AP60SL600DH Todos los transistores

 

AP60SL600DH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP60SL600DH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 56.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 27 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO252
 

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AP60SL600DH Datasheet (PDF)

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 ap60sl600dh.pdf pdf_icon

AP60SL600DH

AP60SL600DHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL600D series are from Advanced Power innovated design andGsilicon process technology to achieve the

 4.1. Size:214K  ape
 ap60sl600di.pdf pdf_icon

AP60SL600DH

AP60SL600DIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3,4 7AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL600D series are from Advanced Power innovated design andsilicon process technology to achieve the l

 5.1. Size:201K  ape
 ap60sl600aj.pdf pdf_icon

AP60SL600DH

AP60SL600AJHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionGAP60SL600A series are from Advanced Power innovated design andDSTO-251(J)silicon process t

 5.2. Size:252K  ape
 ap60sl600ain.pdf pdf_icon

AP60SL600DH

AP60SL600AINHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3,4 7AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL600A series are from Advanced Power innovated design andsilicon process technology to achi

MOSTRAR MÁS

Otros transistores... AP60WN1K5I , AP60WN1K5H , AP60WN1K2J , AP60WN1K2IN , AP60WN1K2H , AP60SL650AFI , AP60SL650AFH , AP60SL600DI , IRF830 , AP60SL600AJ , AP60SL600AIN , AP60SL600AI , AP60SL600AH , AP60SL380AH , AP60SL300AFI , AP60SL280DI , AP60SL280AIN .

History: IRF6623 | OSG55R074FZF | IRFSL23N15DPBF | HSU16N25 | EFC6602R | TSM35N10CP | 2SK3296-ZJ

 

 
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