Справочник MOSFET. AP60SL600DH

 

AP60SL600DH Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP60SL600DH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 56.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 27 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
   Тип корпуса: TO252
     - подбор MOSFET транзистора по параметрам

 

AP60SL600DH Datasheet (PDF)

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 ap60sl600dh.pdf pdf_icon

AP60SL600DH

AP60SL600DHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL600D series are from Advanced Power innovated design andGsilicon process technology to achieve the

 4.1. Size:214K  ape
 ap60sl600di.pdf pdf_icon

AP60SL600DH

AP60SL600DIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3,4 7AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL600D series are from Advanced Power innovated design andsilicon process technology to achieve the l

 5.1. Size:201K  ape
 ap60sl600aj.pdf pdf_icon

AP60SL600DH

AP60SL600AJHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionGAP60SL600A series are from Advanced Power innovated design andDSTO-251(J)silicon process t

 5.2. Size:252K  ape
 ap60sl600ain.pdf pdf_icon

AP60SL600DH

AP60SL600AINHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3,4 7AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL600A series are from Advanced Power innovated design andsilicon process technology to achi

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