AP60SL600DH. Аналоги и основные параметры

Наименование производителя: AP60SL600DH

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 56.8 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6 ns

Cossⓘ - Выходная емкость: 27 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm

Тип корпуса: TO252

Аналог (замена) для AP60SL600DH

- подборⓘ MOSFET транзистора по параметрам

 

AP60SL600DH даташит

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 ap60sl600dh.pdf pdf_icon

AP60SL600DH

AP60SL600DH Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3 7A G RoHS Compliant & Halogen-Free S Description AP60SL600D series are from Advanced Power innovated design and G silicon process technology to achieve the

 4.1. Size:214K  ape
 ap60sl600di.pdf pdf_icon

AP60SL600DH

AP60SL600DI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3,4 7A G RoHS Compliant & Halogen-Free S Description AP60SL600D series are from Advanced Power innovated design and silicon process technology to achieve the l

 5.1. Size:201K  ape
 ap60sl600aj.pdf pdf_icon

AP60SL600DH

AP60SL600AJ Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650V D Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3 7A G RoHS Compliant & Halogen-Free S Description G AP60SL600A series are from Advanced Power innovated design and D S TO-251(J) silicon process t

 5.2. Size:252K  ape
 ap60sl600ain.pdf pdf_icon

AP60SL600DH

AP60SL600AIN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650V D Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3,4 7A G RoHS Compliant & Halogen-Free S Description AP60SL600A series are from Advanced Power innovated design and silicon process technology to achi

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