IRFI550A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFI550A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 167 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 20 nS
Cossⓘ - Capacitancia de salida: 420 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Encapsulados: TO262
Búsqueda de reemplazo de IRFI550A MOSFET
- Selecciónⓘ de transistores por parámetros
IRFI550A datasheet
..1. Size:266K fairchild semi
irfw550a irfi550a.pdf 
IRFW/I550A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 40 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175 C Operating Temperature 2 A (Max.) @ VDS = 100V Lower Leakage Current 10 Lower RDS(ON) 0.032 (Typ.) 1 1 2 3 3 1. Gat
9.5. Size:262K international rectifier
irfi540npbf.pdf
PD - 94833 IRFI540NPbF HEXFET Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 100V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.052 l Fully Avalanche Rated G l Lead-Free ID = 20A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowes
9.6. Size:133K international rectifier
irfi530n.pdf
PD - 9.1353A IRFI530N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.11 Fully Avalanche Rated G ID = 12A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible
9.8. Size:158K international rectifier
irfi530g.pdf
Document Number 90180 www.vishay.com 575 Document Number 90180 www.vishay.com 576 Document Number 90180 www.vishay.com 577 Document Number 90180 www.vishay.com 578 Document Number 90180 www.vishay.com 579 Document Number 90180 www.vishay.com 580 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part o
9.9. Size:223K international rectifier
irfi530npbf.pdf
PD - 95419 IRFI530NPbF HEXFET Power MOSFET l Advanced Process Technology l Isolated Package D l High Voltage Isolation = 2.5KVRMS VDSS = 100V l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated RDS(on) = 0.11 l Lead-Free G ID = 12A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest
9.10. Size:131K international rectifier
irfi540n.pdf
PD - 9.1361A PRELIMINARY IRFI540N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.052 Fully Avalanche Rated G ID = 20A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible
9.11. Size:1017K international rectifier
irfi520gpbf.pdf
PD- 95392 IRFI520GPbF Lead-Free 06/10/04 Document Number 91143 www.vishay.com 1 IRFI520GPbF Document Number 91143 www.vishay.com 2 IRFI520GPbF Document Number 91143 www.vishay.com 3 IRFI520GPbF Document Number 91143 www.vishay.com 4 IRFI520GPbF Document Number 91143 www.vishay.com 5 IRFI520GPbF Document Number 91143 www.vishay.com 6 IRFI520GPbF Document Num
9.12. Size:159K international rectifier
irfi510g.pdf
Document Number 90178 www.vishay.com 563 Document Number 90178 www.vishay.com 564 Document Number 90178 www.vishay.com 565 Document Number 90178 www.vishay.com 566 Document Number 90178 www.vishay.com 567 Document Number 90178 www.vishay.com 568 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part o
9.13. Size:133K international rectifier
irfi520n.pdf
PD - 9.1362A PRELIMINARY IRFI520N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.20 Fully Avalanche Rated G ID = 7.6A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible
9.14. Size:2156K international rectifier
irfi540gpbf.pdf
PD - 94942 IRFI540GPbF Lead-Free 1/13/04 Document Number 91144 www.vishay.com 1 IRFI540GPbF Document Number 91144 www.vishay.com 2 IRFI540GPbF Document Number 91144 www.vishay.com 3 IRFI540GPbF Document Number 91144 www.vishay.com 4 IRFI540GPbF Document Number 91144 www.vishay.com 5 IRFI540GPbF Document Number 91144 www.vishay.com 6 IRFI540GPbF TO-220 Full-
9.16. Size:143K international rectifier
irfi5210.pdf
PD - 9.1404A IRFI5210 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = -100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.06 P-Channel G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extre
9.17. Size:1038K vishay
irfi510g irfi510gpbf sihfi510g.pdf
IRFI510G, SiHFI510G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = 10 V 0.54 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 8.3 175 C Operating Temperature Qgs (nC) 2.3 Dynamic dV/dt Rating Qgd (nC) 3.8 Low
9.18. Size:1473K vishay
irfi540g sihfi540g.pdf
IRFI540G, SiHFI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.077 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 72 COMPLIANT 175 C Operating Temperature Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 32 Low T
9.19. Size:932K vishay
irfi530g irfi530gpbf sihfi530g.pdf
IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) ( )VGS = 10 V 0.16 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 33 175 C Operating Temperature Qgs (nC) 5.4 Dynamic dV/dt Rating Qgd (nC) 15 Low T
9.20. Size:1603K vishay
irfi520g irfi520gpbf sihfi520g.pdf
IRFI520G, SiHFI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.27 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating Temperature Qgs (nC) 4.4 Dynamic dV/dt Rating Qgd (nC) 7.7 Low Th
9.21. Size:1601K vishay
irfi520g sihfi520g.pdf
IRFI520G, SiHFI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.27 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating Temperature Qgs (nC) 4.4 Dynamic dV/dt Rating Qgd (nC) 7.7 Low Th
9.22. Size:1040K vishay
irfi510g sihfi510g.pdf
IRFI510G, SiHFI510G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = 10 V 0.54 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 8.3 175 C Operating Temperature Qgs (nC) 2.3 Dynamic dV/dt Rating Qgd (nC) 3.8 Low
9.23. Size:1475K vishay
irfi540g irfi540gpbf sihfi540g.pdf
IRFI540G, SiHFI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.077 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 72 COMPLIANT 175 C Operating Temperature Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 32 Low T
9.24. Size:499K infineon
irfi540npbf.pdf
IRFI540NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 100V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.052 Fully Avalanche Rated Lead-Free ID 20A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo
9.25. Size:501K infineon
irfi530npbf.pdf
IRFI530NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 100V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.11 Fully Avalanche Rated Lead-Free ID 12A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low
9.26. Size:1476K cn vbsemi
irfi540gpbf.pdf
IRFI540GPBF www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.034 at VGS = 10 V 100 50a COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters D TO-220 FULLPAK G S S D G N-Channel MOSFET ABSOLUTE MA
9.27. Size:275K inchange semiconductor
irfi520g.pdf
iscN-Channel MOSFET Transistor IRFI510G FEATURES Low drain-source on-resistance RDS(ON) =0.27 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI
9.28. Size:275K inchange semiconductor
irfi530g.pdf
iscN-Channel MOSFET Transistor IRFI530G FEATURES Low drain-source on-resistance RDS(ON) =0.16 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI
9.29. Size:244K inchange semiconductor
irfi540n.pdf
isc N-Channel MOSFET Transistor IRFI540N FEATURES Low drain-source on-resistance RDS(on) 52m (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR
9.30. Size:274K inchange semiconductor
irfi510g.pdf
iscN-Channel MOSFET Transistor IRFI510G FEATURES Low drain-source on-resistance RDS(ON) =0.54 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI
9.31. Size:275K inchange semiconductor
irfi540g.pdf
iscN-Channel MOSFET Transistor IRFI540G FEATURES Low drain-source on-resistance RDS(ON) =0.077 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
Otros transistores... IRFI510A, IRFI520A, IRFI520N, IRFI5210, IRFI530A, IRFI530N, IRFI540A, IRFI540N, 4N60, IRFI610A, IRFI614A, IRFI614G, IRFI620A, IRFI620G, IRFI624A, IRFI624G, IRFI630A
