IRFW/I550AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 40 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175 C Operating Temperature2A (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.032 (Typ.)112331. Gat

PD - 94833IRFI540NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Isolated PackageVDSS = 100Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.052l Fully Avalanche RatedGl Lead-FreeID = 20ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowes

PD - 9.1353AIRFI530NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.11 Fully Avalanche RatedGID = 12ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible

Document Number: 90180 www.vishay.com575Document Number: 90180 www.vishay.com576Document Number: 90180 www.vishay.com577Document Number: 90180 www.vishay.com578Document Number: 90180 www.vishay.com579Document Number: 90180 www.vishay.com580Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as part o

PD - 95419IRFI530NPbFHEXFET Power MOSFETl Advanced Process Technologyl Isolated PackageDl High Voltage Isolation = 2.5KVRMS VDSS = 100Vl Sink to Lead Creepage Dist. = 4.8mml Fully Avalanche RatedRDS(on) = 0.11l Lead-Free GID = 12ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest

PD - 9.1361APRELIMINARY IRFI540NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.052 Fully Avalanche RatedGID = 20ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible

PD- 95392IRFI520GPbF Lead-Free06/10/04Document Number: 91143 www.vishay.com1IRFI520GPbFDocument Number: 91143 www.vishay.com2IRFI520GPbFDocument Number: 91143 www.vishay.com3IRFI520GPbFDocument Number: 91143 www.vishay.com4IRFI520GPbFDocument Number: 91143 www.vishay.com5IRFI520GPbFDocument Number: 91143 www.vishay.com6IRFI520GPbFDocument Num

Document Number: 90178 www.vishay.com563Document Number: 90178 www.vishay.com564Document Number: 90178 www.vishay.com565Document Number: 90178 www.vishay.com566Document Number: 90178 www.vishay.com567Document Number: 90178 www.vishay.com568Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as part o

PD - 9.1362APRELIMINARY IRFI520NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.20 Fully Avalanche RatedGID = 7.6ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible

PD - 94942IRFI540GPbF Lead-Free1/13/04Document Number: 91144 www.vishay.com1IRFI540GPbFDocument Number: 91144 www.vishay.com2IRFI540GPbFDocument Number: 91144 www.vishay.com3IRFI540GPbFDocument Number: 91144 www.vishay.com4IRFI540GPbFDocument Number: 91144 www.vishay.com5IRFI540GPbFDocument Number: 91144 www.vishay.com6IRFI540GPbFTO-220 Full-

PD - 9.1404AIRFI5210PRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = -100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.06 P-ChannelG Fully Avalanche RatedID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextre

IRFI510G, SiHFI510GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Availablef = 60 Hz)RDS(on) ()VGS = 10 V 0.54RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 8.3 175 C Operating TemperatureQgs (nC) 2.3 Dynamic dV/dt RatingQgd (nC) 3.8 Low

IRFI540G, SiHFI540GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.077 f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 72COMPLIANT 175 C Operating TemperatureQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 32 Low T

IRFI530G, SiHFI530GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = 10 V 0.16RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 33 175 C Operating TemperatureQgs (nC) 5.4 Dynamic dV/dt RatingQgd (nC) 15 Low T

IRFI520G, SiHFI520GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.27f = 60 Hz) RoHS*COMPLIANTQg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating TemperatureQgs (nC) 4.4 Dynamic dV/dt RatingQgd (nC) 7.7 Low Th

IRFI520G, SiHFI520GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.27f = 60 Hz) RoHS*COMPLIANTQg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating TemperatureQgs (nC) 4.4 Dynamic dV/dt RatingQgd (nC) 7.7 Low Th

IRFI510G, SiHFI510GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Availablef = 60 Hz)RDS(on) ()VGS = 10 V 0.54RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 8.3 175 C Operating TemperatureQgs (nC) 2.3 Dynamic dV/dt RatingQgd (nC) 3.8 Low

IRFI540G, SiHFI540GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.077 f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 72COMPLIANT 175 C Operating TemperatureQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 32 Low T

IRFI540NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 100V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.052 Fully Avalanche Rated Lead-Free ID 20A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo

IRFI530NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 100V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.11 Fully Avalanche Rated Lead-Free ID 12A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

IRFI540GPBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.034 at VGS = 10 V10050aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersDTO-220 FULLPAKGSSDGN-Channel MOSFETABSOLUTE MA

iscN-Channel MOSFET Transistor IRFI510GFEATURESLow drain-source on-resistance:RDS(ON) =0.27 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

iscN-Channel MOSFET Transistor IRFI530GFEATURESLow drain-source on-resistance:RDS(ON) =0.16 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

isc N-Channel MOSFET Transistor IRFI540NFEATURESLow drain-source on-resistance:RDS(on) 52m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

iscN-Channel MOSFET Transistor IRFI510GFEATURESLow drain-source on-resistance:RDS(ON) =0.54 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

iscN-Channel MOSFET Transistor IRFI540GFEATURESLow drain-source on-resistance:RDS(ON) =0.077 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN