AP60N2R5IN Datasheet. Equivalente

 ..1. Size:248K  ape
 ap60n2r5in.pdf

AP60N2R5IN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650V D Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID3 3.5A G RoHS Compliant & Halogen-Free S Description AP60N2R5 series are from Advanced Power innovated design and silicon process technology to achieve

 6.1. Size:199K  ape
 ap60n2r5j.pdf

AP60N2R5J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID 3.5A G RoHS Compliant & Halogen-Free S Description AP60N2R5 series are from Advanced Power innovated design and G D S TO-251(J) silicon process technology to achi

 9.1. Size:72K  ape
 ap60n03gs.pdf

AP60N03GS/P Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Fast Switching RDS(ON) 13.5m Simple Drive Requirement ID 55A G S Description The Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching,

 9.2. Size:162K  ape
 ap60n03gp.pdf

AP60N03GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Fast Switching Characteristic RDS(ON) 13.5m Simple Drive Requirement ID 55A G RoHS Compliant & Halogen-Free S Description AP60N03 series are from Advanced Power innovated design and G silicon process technology to achieve the l

 9.3. Size:61K  ape
 ap60n03gh ap60n03gj.pdf

AP60N03GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Fast Switching RDS(ON) 13.5m Simple Drive Requirement ID 55A G RoHS Compliant S Description G The Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized d

 9.4. Size:389K  ncepower
 nceap60nd30ag.pdf

http //www.ncepower.com NCEAP60ND30AG NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60ND30AG uses Super Trench technology that is V =60V,I =40A DS D uniquely optimized to provide the most efficient high frequency R =12m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =15m (typical) @ V =4.5V DS

 9.5. Size:644K  ncepower
 nceap60nd60g.pdf

NCEAP60ND60G http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60ND60G uses Super Trench technology that is V =60V,I =70A DS D uniquely optimized to provide the most efficient high frequency R =7.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R

 9.6. Size:1507K  allpower
 ap60n04q.pdf

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 ap60n02df.pdf

AP60N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP60N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

 9.8. Size:1244K  cn apm
 ap60n03d.pdf

AP60N03D 30V N-Channel Enhancement Mode MOSFET Description The AP60N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =60A DS D R

 9.9. Size:1158K  cn apm
 ap60n02d.pdf

AP60N02D 20V N-Channel Enhancement Mode MOSFET Description The AP60N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

 9.10. Size:1354K  cn apm
 ap60n02nf.pdf

AP60N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP60N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

 9.11. Size:1673K  cn apm
 ap60n03df.pdf

AP60N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP60N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =60A DS D R

 9.12. Size:1593K  cn apm
 ap60n04df.pdf

AP60N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP60N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =60 A DS D R

 9.13. Size:1477K  cn apm
 ap60n06f.pdf

AP60N06F 60V N-Channel Enhancement Mode MOSFET Description The AP60N06F uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =60A DS D R

 9.14. Size:1843K  cn apm
 ap60n03nf.pdf

AP60N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP60N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =60A DS D R

 9.15. Size:1560K  cn apm
 ap60n03p.pdf

AP60N03P 30V N-Channel Enhancement Mode MOSFET Description The AP60N03P uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =60 A DS D R

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 ap60n03f ap60n03t ap60n03p.pdf

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 ap60n04d.pdf

AP60N04D 40V N-Channel Enhancement Mode MOSFET Description The AP60N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =60 A DS D R

 9.18. Size:1402K  cn apm
 ap60n02bd.pdf

AP60N02BD 20V N-Channel Enhancement Mode MOSFET Description The AP60N02BD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

 9.19. Size:1598K  cn apm
 ap60n03y.pdf

AP60N03Y 30V N-Channel Enhancement Mode MOSFET Description The AP60N03Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =60A DS D R

 9.20. Size:1454K  cn apm
 ap60n04nf.pdf

AP60N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP60N04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =60 A DS D R