AP60N2R5IN
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP60N2R5IN
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 26
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 3.5
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 17
nC
trⓘ -
Время нарастания: 5
ns
Cossⓘ - Выходная емкость: 27
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.5
Ohm
Тип корпуса: TO220F-NL
Аналог (замена) для AP60N2R5IN
AP60N2R5IN
Datasheet (PDF)
..1. Size:248K ape
ap60n2r5in.pdf 
AP60N2R5INHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650VD Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID3 3.5AG RoHS Compliant & Halogen-FreeSDescriptionAP60N2R5 series are from Advanced Power innovated design andsilicon process technology to achieve
6.1. Size:199K ape
ap60n2r5j.pdf 
AP60N2R5JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID 3.5AG RoHS Compliant & Halogen-FreeSDescriptionAP60N2R5 series are from Advanced Power innovated design and GDSTO-251(J)silicon process technology to achi
9.1. Size:72K ape
ap60n03gs.pdf 
AP60N03GS/PPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow On-Resistance D BVDSS 30V Fast Switching RDS(ON) 13.5m Simple Drive Requirement ID 55A GSDescriptionThe Advanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,
9.2. Size:162K ape
ap60n03gp.pdf 
AP60N03GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Fast Switching Characteristic RDS(ON) 13.5m Simple Drive Requirement ID 55AG RoHS Compliant & Halogen-FreeSDescriptionAP60N03 series are from Advanced Power innovated design andGsilicon process technology to achieve the l
9.3. Size:61K ape
ap60n03gh ap60n03gj.pdf 
AP60N03GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Fast Switching RDS(ON) 13.5m Simple Drive Requirement ID 55AG RoHS CompliantSDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized d
9.4. Size:389K ncepower
nceap60nd30ag.pdf 
http://www.ncepower.comNCEAP60ND30AGNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP60ND30AG uses Super Trench technology that is V =60V,I =40ADS Duniquely optimized to provide the most efficient high frequency R =12m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =15m (typical) @ V =4.5VDS
9.5. Size:644K ncepower
nceap60nd60g.pdf 
NCEAP60ND60Ghttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP60ND60G uses Super Trench technology that is V =60V,I =70ADS Duniquely optimized to provide the most efficient high frequencyR =7.8m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R
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