AP55T10GI Todos los transistores

 

AP55T10GI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP55T10GI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 36.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 31.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0165 Ohm
   Paquete / Cubierta: TO220F
 

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AP55T10GI Datasheet (PDF)

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 ap55t10gi.pdf pdf_icon

AP55T10GI

AP55T10GI-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristics ID 31.7AG RoHS Compliant & Halogen-FreeSDescriptionAP55T10 series are from Advanced Power inno

 0.1. Size:117K  ape
 ap55t10gi-hf.pdf pdf_icon

AP55T10GI

AP55T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristics ID 31.7AG RoHS Compliant & Halogen-FreeSDescriptionAP55T10 series are from Advanced Power innovated design and siliconprocess technology to achieve the lo

 6.1. Size:58K  ape
 ap55t10gp-hf.pdf pdf_icon

AP55T10GI

AP55T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedi

 6.2. Size:193K  ape
 ap55t10gh.pdf pdf_icon

AP55T10GI

AP55T10GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56AG RoHS Compliant & Halogen-FreeSDescriptionGAP55T10 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology

MOSTRAR MÁS

Otros transistores... AP60SL115AI , AP60N2R5J , AP60N2R5IN , AP60AN750IN , AP60AN750I , AP5602P , AP55T10GR , AP55T10GP , IRF840 , AP55T10GH , AP55T06GI , AP50WN750P , AP50WN750I , AP50WN650I , AP50WN520P , AP50WN520I , AP50WN270W .

History: SVFP4N60CADTR | AFN1443 | SM6F03NSU

 

 
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