AP55T10GH Todos los transistores

 

AP55T10GH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP55T10GH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 56 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0165 Ohm
   Paquete / Cubierta: TO252
 

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AP55T10GH Datasheet (PDF)

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AP55T10GH

AP55T10GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56AG RoHS Compliant & Halogen-FreeSDescriptionGAP55T10 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology

 ..2. Size:2205K  cn vbsemi
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AP55T10GH

AP55T10GHwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0185 at VGS = 10 V 100 60 38 nCAPPLICATIONS Primary Side Switch Isolated DC/DC ConverterTO-252D G S G D STop View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless other

 0.1. Size:57K  ape
 ap55t10gh-hf.pdf pdf_icon

AP55T10GH

AP55T10GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the GDSTO-252(H)designer with the best combination of fast

 6.1. Size:58K  ape
 ap55t10gp-hf.pdf pdf_icon

AP55T10GH

AP55T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedi

MOSTRAR MÁS

Otros transistores... AP60N2R5J , AP60N2R5IN , AP60AN750IN , AP60AN750I , AP5602P , AP55T10GR , AP55T10GP , AP55T10GI , 20N60 , AP55T06GI , AP50WN750P , AP50WN750I , AP50WN650I , AP50WN520P , AP50WN520I , AP50WN270W , AP50WN270IN .

History: SLP12N60C | DMN66D0LW | FQP5N20 | IPA90R1K2C3 | FDFMA2P859T | NP82N055DLE | PMZB200UNE

 

 
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