AP55T06GI Todos los transistores

 

AP55T06GI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP55T06GI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 29 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: TO220F
 

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AP55T06GI Datasheet (PDF)

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 ap55t06gi.pdf pdf_icon

AP55T06GI

AP55T06GI-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 29AGSDescriptionAP55T06 series are from Advanced Power innovated design andsilicon process technology to achiev

 0.1. Size:59K  ape
 ap55t06gi-hf.pdf pdf_icon

AP55T06GI

AP55T06GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 29AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-Gresist

 6.1. Size:118K  ape
 ap55t06gs-hf.pdf pdf_icon

AP55T06GI

AP55T06GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 32.4AGSDescriptionAP55T06 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-Gresistance and

 9.1. Size:58K  ape
 ap55t10gp-hf.pdf pdf_icon

AP55T06GI

AP55T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedi

MOSTRAR MÁS

Otros transistores... AP60N2R5IN , AP60AN750IN , AP60AN750I , AP5602P , AP55T10GR , AP55T10GP , AP55T10GI , AP55T10GH , IRF540N , AP50WN750P , AP50WN750I , AP50WN650I , AP50WN520P , AP50WN520I , AP50WN270W , AP50WN270IN , AP50WN270I .

History: PJD1NA50 | PA210BC | CS3N65P | UPA2463T1Q | NTP30N06 | HMS4030 | IPD50P04P4-13

 

 
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