AP55T06GI - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP55T06GI
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 31.3
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 29
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 25
ns
Cossⓘ - Выходная емкость: 160
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.018
Ohm
Тип корпуса:
TO220F
Аналог (замена) для AP55T06GI
AP55T06GI Datasheet (PDF)
..1. Size:164K ape
ap55t06gi.pdf 

AP55T06GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 29A G S Description AP55T06 series are from Advanced Power innovated design and silicon process technology to achiev
0.1. Size:59K ape
ap55t06gi-hf.pdf 

AP55T06GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 29A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- G resist
6.1. Size:118K ape
ap55t06gs-hf.pdf 

AP55T06GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 32.4A G S Description AP55T06 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- G resistance and
9.1. Size:58K ape
ap55t10gp-hf.pdf 

AP55T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi
9.2. Size:193K ape
ap55t10gh.pdf 

AP55T10GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56A G RoHS Compliant & Halogen-Free S Description G AP55T10 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology
9.3. Size:162K ape
ap55t10gi.pdf 

AP55T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristics ID 31.7A G RoHS Compliant & Halogen-Free S Description AP55T10 series are from Advanced Power inno
9.4. Size:117K ape
ap55t10gi-hf.pdf 

AP55T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristics ID 31.7A G RoHS Compliant & Halogen-Free S Description AP55T10 series are from Advanced Power innovated design and silicon process technology to achieve the lo
9.5. Size:57K ape
ap55t10gh-hf.pdf 

AP55T10GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast
9.6. Size:144K ape
ap55t10gp.pdf 

AP55T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V RDS(ON) 16.5m Lower Gate Charge Fast Switching Characteristic ID 56A G RoHS Compliant & Halogen-Free S Description AP55T10 series are from Advanced Power innova
9.7. Size:345K ape
ap55t10gr.pdf 

AP55T10GR Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56A G G RoHS Compliant & Halogen-Free S S Description AP4604 seriesare from Advanced Power innovated design AP55T10series arefrom Advanced Power innovated
9.8. Size:93K ape
ap55t10gs-hf.pdf 

AP55T10GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 18m Fast Switching Characteristic ID 54A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D rug
9.9. Size:2205K cn vbsemi
ap55t10gh.pdf 

AP55T10GH www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0185 at VGS = 10 V 100 60 38 nC APPLICATIONS Primary Side Switch Isolated DC/DC Converter TO-252 D G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless other
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