AP55T06GI - аналоги и даташиты транзистора

 

AP55T06GI - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP55T06GI
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 31.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 29 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 25 ns
   Cossⓘ - Выходная емкость: 160 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для AP55T06GI

 

AP55T06GI Datasheet (PDF)

 ..1. Size:164K  ape
ap55t06gi.pdfpdf_icon

AP55T06GI

AP55T06GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 29A G S Description AP55T06 series are from Advanced Power innovated design and silicon process technology to achiev

 0.1. Size:59K  ape
ap55t06gi-hf.pdfpdf_icon

AP55T06GI

AP55T06GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 29A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- G resist

 6.1. Size:118K  ape
ap55t06gs-hf.pdfpdf_icon

AP55T06GI

AP55T06GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 32.4A G S Description AP55T06 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- G resistance and

 9.1. Size:58K  ape
ap55t10gp-hf.pdfpdf_icon

AP55T06GI

AP55T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi

Другие MOSFET... AP60N2R5IN , AP60AN750IN , AP60AN750I , AP5602P , AP55T10GR , AP55T10GP , AP55T10GI , AP55T10GH , IRF540N , AP50WN750P , AP50WN750I , AP50WN650I , AP50WN520P , AP50WN520I , AP50WN270W , AP50WN270IN , AP50WN270I .

 

 
Back to Top

 


 
.