AP50WN520I
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP50WN520I
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35.7
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 500
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30
V
|Id|ⓘ - Corriente continua de drenaje: 12
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 42
nS
Cossⓘ - Capacitancia
de salida: 75
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.52
Ohm
Paquete / Cubierta:
TO220F
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AP50WN520I
Datasheet (PDF)
..1. Size:60K ape
ap50wn520i.pdf 
AP50WN520IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 0.52 Fast Switching Characteristic ID3 12AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN520 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p
5.1. Size:60K ape
ap50wn520p.pdf
AP50WN520PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 0.52 Fast Switching Characteristic ID3 12AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN520 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p
8.1. Size:176K ape
ap50wn1k5i.pdf
AP50WN1K5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r
8.2. Size:60K ape
ap50wn650i.pdf
AP50WN650IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 0.65 Fast Switching Characteristic ID3 11AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN650 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p
8.3. Size:60K ape
ap50wn750i.pdf
AP50WN750IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN750 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p
8.4. Size:102K ape
ap50wn270i.pdf
AP50WN270IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 0.27 Fast Switching Characteristic ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN270 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-
8.5. Size:198K ape
ap50wn1k5h.pdf
AP50WN1K5HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K5 series are from the innovated design and siliconGprocess technology to achieve the lowest possible o
8.6. Size:175K ape
ap50wn1k0i.pdf
AP50WN1K0IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.03 Fast Switching Characteristic ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K0 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r
8.7. Size:66K ape
ap50wn1k5p.pdf
AP50WN1K5PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r
8.8. Size:184K ape
ap50wn270w.pdf
AP50WN270WHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 0.27 Fast Switching Characteristic ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN270 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-
8.9. Size:197K ape
ap50wn1k0h.pdf
AP50WN1K0HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.03 Fast Switching Characteristic ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K0 series are from the innovated design and siliconGprocess technology to achieve the lowest possible o
8.10. Size:65K ape
ap50wn750p.pdf
AP50WN750PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN750 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p
8.11. Size:212K ape
ap50wn270in.pdf
AP50WN270INHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 0.27 Fast Switching Characteristic ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN270 series are from the innovated design and siliconprocess technology to achieve the lowest possible on
Otros transistores... AP55T10GP
, AP55T10GI
, AP55T10GH
, AP55T06GI
, AP50WN750P
, AP50WN750I
, AP50WN650I
, AP50WN520P
, IRFP460
, AP50WN270W
, AP50WN270IN
, AP50WN270I
, AP50WN1K5P
, AP50WN1K5I
, AP50WN1K5H
, AP50WN1K0I
, AP50WN1K0H
.
History: IPD031N03L
