AP50WN270I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP50WN270I
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 41.6
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 500
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30
V
|Id|ⓘ - Corriente continua de drenaje: 20
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 53
nS
Cossⓘ - Capacitancia
de salida: 140
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.27
Ohm
Paquete / Cubierta:
TO220F
Búsqueda de reemplazo de MOSFET AP50WN270I
Principales características: AP50WN270I
..1. Size:102K ape
ap50wn270i.pdf 
AP50WN270I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 0.27 Fast Switching Characteristic ID3 20A G RoHS Compliant & Halogen-Free S Description AP50WN270 series are from the innovated design and silicon process technology to achieve the lowest possible on-
0.1. Size:212K ape
ap50wn270in.pdf
AP50WN270IN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 0.27 Fast Switching Characteristic ID3 20A G RoHS Compliant & Halogen-Free S Description AP50WN270 series are from the innovated design and silicon process technology to achieve the lowest possible on
5.1. Size:184K ape
ap50wn270w.pdf
AP50WN270W Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 0.27 Fast Switching Characteristic ID3 20A G RoHS Compliant & Halogen-Free S Description AP50WN270 series are from the innovated design and silicon process technology to achieve the lowest possible on-
8.1. Size:60K ape
ap50wn520p.pdf
AP50WN520P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 0.52 Fast Switching Characteristic ID3 12A G RoHS Compliant & Halogen-Free S Description AP50WN520 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p
8.2. Size:176K ape
ap50wn1k5i.pdf
AP50WN1K5I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5A G RoHS Compliant & Halogen-Free S Description AP50WN1K5 series are from the innovated design and silicon process technology to achieve the lowest possible on-r
8.3. Size:60K ape
ap50wn520i.pdf
AP50WN520I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 0.52 Fast Switching Characteristic ID3 12A G RoHS Compliant & Halogen-Free S Description AP50WN520 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p
8.4. Size:60K ape
ap50wn650i.pdf
AP50WN650I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 0.65 Fast Switching Characteristic ID3 11A G RoHS Compliant & Halogen-Free S Description AP50WN650 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p
8.5. Size:60K ape
ap50wn750i.pdf
AP50WN750I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID3 10A G RoHS Compliant & Halogen-Free S Description AP50WN750 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p
8.6. Size:198K ape
ap50wn1k5h.pdf
AP50WN1K5H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5A G RoHS Compliant & Halogen-Free S Description AP50WN1K5 series are from the innovated design and silicon G process technology to achieve the lowest possible o
8.7. Size:175K ape
ap50wn1k0i.pdf
AP50WN1K0I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 1.03 Fast Switching Characteristic ID3 7A G RoHS Compliant & Halogen-Free S Description AP50WN1K0 series are from the innovated design and silicon process technology to achieve the lowest possible on-r
8.8. Size:66K ape
ap50wn1k5p.pdf
AP50WN1K5P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5A G RoHS Compliant & Halogen-Free S Description AP50WN1K5 series are from the innovated design and silicon process technology to achieve the lowest possible on-r
8.9. Size:197K ape
ap50wn1k0h.pdf
AP50WN1K0H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 1.03 Fast Switching Characteristic ID3 7A G RoHS Compliant & Halogen-Free S Description AP50WN1K0 series are from the innovated design and silicon G process technology to achieve the lowest possible o
8.10. Size:65K ape
ap50wn750p.pdf
AP50WN750P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID3 10A G RoHS Compliant & Halogen-Free S Description AP50WN750 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p
Otros transistores... AP55T06GI
, AP50WN750P
, AP50WN750I
, AP50WN650I
, AP50WN520P
, AP50WN520I
, AP50WN270W
, AP50WN270IN
, IRFB4110
, AP50WN1K5P
, AP50WN1K5I
, AP50WN1K5H
, AP50WN1K0I
, AP50WN1K0H
, AP50T10GS
, AP50T10GP
, AP50T10GJ
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