AP50WN270I Todos los transistores

 

AP50WN270I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP50WN270I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 41.6 W
   Voltaje máximo drenador - fuente |Vds|: 500 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 20 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 69 nC
   Tiempo de subida (tr): 53 nS
   Conductancia de drenaje-sustrato (Cd): 140 pF
   Resistencia entre drenaje y fuente RDS(on): 0.27 Ohm
   Paquete / Cubierta: TO220F

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AP50WN270I Datasheet (PDF)

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ap50wn270i.pdf

AP50WN270I
AP50WN270I

AP50WN270IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 0.27 Fast Switching Characteristic ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN270 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-

 0.1. Size:212K  ape
ap50wn270in.pdf

AP50WN270I
AP50WN270I

AP50WN270INHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 0.27 Fast Switching Characteristic ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN270 series are from the innovated design and siliconprocess technology to achieve the lowest possible on

 5.1. Size:184K  ape
ap50wn270w.pdf

AP50WN270I
AP50WN270I

AP50WN270WHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 0.27 Fast Switching Characteristic ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN270 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-

 8.1. Size:60K  ape
ap50wn520p.pdf

AP50WN270I
AP50WN270I

AP50WN520PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 0.52 Fast Switching Characteristic ID3 12AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN520 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

 8.2. Size:176K  ape
ap50wn1k5i.pdf

AP50WN270I
AP50WN270I

AP50WN1K5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r

 8.3. Size:60K  ape
ap50wn520i.pdf

AP50WN270I
AP50WN270I

AP50WN520IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 0.52 Fast Switching Characteristic ID3 12AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN520 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

 8.4. Size:60K  ape
ap50wn650i.pdf

AP50WN270I
AP50WN270I

AP50WN650IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 0.65 Fast Switching Characteristic ID3 11AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN650 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

 8.5. Size:60K  ape
ap50wn750i.pdf

AP50WN270I
AP50WN270I

AP50WN750IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN750 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

 8.6. Size:198K  ape
ap50wn1k5h.pdf

AP50WN270I
AP50WN270I

AP50WN1K5HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K5 series are from the innovated design and siliconGprocess technology to achieve the lowest possible o

 8.7. Size:175K  ape
ap50wn1k0i.pdf

AP50WN270I
AP50WN270I

AP50WN1K0IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.03 Fast Switching Characteristic ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K0 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r

 8.8. Size:66K  ape
ap50wn1k5p.pdf

AP50WN270I
AP50WN270I

AP50WN1K5PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r

 8.9. Size:197K  ape
ap50wn1k0h.pdf

AP50WN270I
AP50WN270I

AP50WN1K0HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.03 Fast Switching Characteristic ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K0 series are from the innovated design and siliconGprocess technology to achieve the lowest possible o

 8.10. Size:65K  ape
ap50wn750p.pdf

AP50WN270I
AP50WN270I

AP50WN750PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN750 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

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