AP50WN270I Datasheet and Replacement
Type Designator: AP50WN270I
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 41.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 69
nC
trⓘ - Rise Time: 53
nS
Cossⓘ -
Output Capacitance: 140
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27
Ohm
Package:
TO220F
- MOSFET Cross-Reference Search
AP50WN270I Datasheet (PDF)
..1. Size:102K ape
ap50wn270i.pdf 
AP50WN270IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 0.27 Fast Switching Characteristic ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN270 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-
0.1. Size:212K ape
ap50wn270in.pdf
AP50WN270INHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 0.27 Fast Switching Characteristic ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN270 series are from the innovated design and siliconprocess technology to achieve the lowest possible on
5.1. Size:184K ape
ap50wn270w.pdf
AP50WN270WHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 0.27 Fast Switching Characteristic ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN270 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-
8.1. Size:60K ape
ap50wn520p.pdf
AP50WN520PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 0.52 Fast Switching Characteristic ID3 12AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN520 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p
8.2. Size:176K ape
ap50wn1k5i.pdf
AP50WN1K5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r
8.3. Size:60K ape
ap50wn520i.pdf
AP50WN520IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 0.52 Fast Switching Characteristic ID3 12AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN520 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p
8.4. Size:60K ape
ap50wn650i.pdf
AP50WN650IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 0.65 Fast Switching Characteristic ID3 11AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN650 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p
8.5. Size:60K ape
ap50wn750i.pdf
AP50WN750IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN750 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p
8.6. Size:198K ape
ap50wn1k5h.pdf
AP50WN1K5HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K5 series are from the innovated design and siliconGprocess technology to achieve the lowest possible o
8.7. Size:175K ape
ap50wn1k0i.pdf
AP50WN1K0IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.03 Fast Switching Characteristic ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K0 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r
8.8. Size:66K ape
ap50wn1k5p.pdf
AP50WN1K5PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r
8.9. Size:197K ape
ap50wn1k0h.pdf
AP50WN1K0HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.03 Fast Switching Characteristic ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K0 series are from the innovated design and siliconGprocess technology to achieve the lowest possible o
8.10. Size:65K ape
ap50wn750p.pdf
AP50WN750PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN750 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p
Datasheet: AP55T06GI
, AP50WN750P
, AP50WN750I
, AP50WN650I
, AP50WN520P
, AP50WN520I
, AP50WN270W
, AP50WN270IN
, IRFP260N
, AP50WN1K5P
, AP50WN1K5I
, AP50WN1K5H
, AP50WN1K0I
, AP50WN1K0H
, AP50T10GS
, AP50T10GP
, AP50T10GJ
.
History: AP4957AGM-HF
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