AP50WN1K0I Todos los transistores

 

AP50WN1K0I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP50WN1K0I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.03 Ohm
   Paquete / Cubierta: TO220F
 

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AP50WN1K0I Datasheet (PDF)

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AP50WN1K0I

AP50WN1K0IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.03 Fast Switching Characteristic ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K0 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r

 5.1. Size:197K  ape
 ap50wn1k0h.pdf pdf_icon

AP50WN1K0I

AP50WN1K0HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.03 Fast Switching Characteristic ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K0 series are from the innovated design and siliconGprocess technology to achieve the lowest possible o

 6.1. Size:176K  ape
 ap50wn1k5i.pdf pdf_icon

AP50WN1K0I

AP50WN1K5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r

 6.2. Size:198K  ape
 ap50wn1k5h.pdf pdf_icon

AP50WN1K0I

AP50WN1K5HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K5 series are from the innovated design and siliconGprocess technology to achieve the lowest possible o

MOSTRAR MÁS

Otros transistores... AP50WN520P , AP50WN520I , AP50WN270W , AP50WN270IN , AP50WN270I , AP50WN1K5P , AP50WN1K5I , AP50WN1K5H , AON6414A , AP50WN1K0H , AP50T10GS , AP50T10GP , AP50T10GJ , AP50T10GI , AP50T10GH , AP50T10AGI , AP50SL290DH .

History: IXTP12N65X2

 

 
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