All MOSFET. AP50WN1K0I Datasheet

 

AP50WN1K0I MOSFET. Datasheet pdf. Equivalent

Type Designator: AP50WN1K0I

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 32.8 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 22 nS

Drain-Source Capacitance (Cd): 45 pF

Maximum Drain-Source On-State Resistance (Rds): 1.03 Ohm

Package: TO220F

AP50WN1K0I Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP50WN1K0I Datasheet (PDF)

1.1. ap50wn1k0h.pdf Size:197K _a-power

AP50WN1K0I
AP50WN1K0I

AP50WN1K0H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% UIS Test BVDSS 500V D ▼ Simple Drive Requirement RDS(ON) 1.03Ω ▼ Fast Switching Characteristic ID3 7A G ▼ RoHS Compliant & Halogen-Free S Description AP50WN1K0 series are from the innovated design and silicon G process technology to achieve the lowest possible o

1.2. ap50wn1k0i.pdf Size:175K _a-power

AP50WN1K0I
AP50WN1K0I

AP50WN1K0I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% UIS Test BVDSS 500V D ▼ Simple Drive Requirement RDS(ON) 1.03Ω ▼ Fast Switching Characteristic ID3 7A G ▼ RoHS Compliant & Halogen-Free S Description AP50WN1K0 series are from the innovated design and silicon process technology to achieve the lowest possible on-r

 2.1. ap50wn1k5p.pdf Size:66K _a-power

AP50WN1K0I
AP50WN1K0I

AP50WN1K5P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% UIS Test BVDSS 500V D ▼ Simple Drive Requirement RDS(ON) 1.55Ω ▼ Fast Switching Characteristic ID3 5A G ▼ RoHS Compliant & Halogen-Free S Description AP50WN1K5 series are from the innovated design and silicon process technology to achieve the lowest possible on-r

2.2. ap50wn1k5i.pdf Size:176K _a-power

AP50WN1K0I
AP50WN1K0I

AP50WN1K5I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% UIS Test BVDSS 500V D ▼ Simple Drive Requirement RDS(ON) 1.55Ω ▼ Fast Switching Characteristic ID3 5A G ▼ RoHS Compliant & Halogen-Free S Description AP50WN1K5 series are from the innovated design and silicon process technology to achieve the lowest possible on-r

 2.3. ap50wn1k5h.pdf Size:198K _a-power

AP50WN1K0I
AP50WN1K0I

AP50WN1K5H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% UIS Test BVDSS 500V D ▼ Simple Drive Requirement RDS(ON) 1.55Ω ▼ Fast Switching Characteristic ID3 5A G ▼ RoHS Compliant & Halogen-Free S Description AP50WN1K5 series are from the innovated design and silicon G process technology to achieve the lowest possible o

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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