AP50WN1K0I Datasheet. Specs and Replacement
Type Designator: AP50WN1K0I 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 32.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.03 Ohm
Package: TO220F
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AP50WN1K0I substitution
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AP50WN1K0I datasheet
ap50wn1k0i.pdf
AP50WN1K0I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 1.03 Fast Switching Characteristic ID3 7A G RoHS Compliant & Halogen-Free S Description AP50WN1K0 series are from the innovated design and silicon process technology to achieve the lowest possible on-r... See More ⇒
ap50wn1k0h.pdf
AP50WN1K0H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 1.03 Fast Switching Characteristic ID3 7A G RoHS Compliant & Halogen-Free S Description AP50WN1K0 series are from the innovated design and silicon G process technology to achieve the lowest possible o... See More ⇒
ap50wn1k5i.pdf
AP50WN1K5I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5A G RoHS Compliant & Halogen-Free S Description AP50WN1K5 series are from the innovated design and silicon process technology to achieve the lowest possible on-r... See More ⇒
ap50wn1k5h.pdf
AP50WN1K5H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5A G RoHS Compliant & Halogen-Free S Description AP50WN1K5 series are from the innovated design and silicon G process technology to achieve the lowest possible o... See More ⇒
Detailed specifications: AP50WN520P, AP50WN520I, AP50WN270W, AP50WN270IN, AP50WN270I, AP50WN1K5P, AP50WN1K5I, AP50WN1K5H, IRFB4227, AP50WN1K0H, AP50T10GS, AP50T10GP, AP50T10GJ, AP50T10GI, AP50T10GH, AP50T10AGI, AP50SL290DH
Keywords - AP50WN1K0I MOSFET specs
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History: SVS70R600FE3 | SVS70R420MJE3 | APQ02SN65AA | AP50T10GJ
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