AP50WN1K0H Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP50WN1K0H  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22 nS

Cossⓘ - Capacitancia de salida: 45 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.03 Ohm

Encapsulados: TO252

  📄📄 Copiar 

 Búsqueda de reemplazo de AP50WN1K0H MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP50WN1K0H datasheet

 ..1. Size:197K  ape
 ap50wn1k0h.pdf pdf_icon

AP50WN1K0H

AP50WN1K0H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 1.03 Fast Switching Characteristic ID3 7A G RoHS Compliant & Halogen-Free S Description AP50WN1K0 series are from the innovated design and silicon G process technology to achieve the lowest possible o

 5.1. Size:175K  ape
 ap50wn1k0i.pdf pdf_icon

AP50WN1K0H

AP50WN1K0I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 1.03 Fast Switching Characteristic ID3 7A G RoHS Compliant & Halogen-Free S Description AP50WN1K0 series are from the innovated design and silicon process technology to achieve the lowest possible on-r

 6.1. Size:176K  ape
 ap50wn1k5i.pdf pdf_icon

AP50WN1K0H

AP50WN1K5I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5A G RoHS Compliant & Halogen-Free S Description AP50WN1K5 series are from the innovated design and silicon process technology to achieve the lowest possible on-r

 6.2. Size:198K  ape
 ap50wn1k5h.pdf pdf_icon

AP50WN1K0H

AP50WN1K5H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5A G RoHS Compliant & Halogen-Free S Description AP50WN1K5 series are from the innovated design and silicon G process technology to achieve the lowest possible o

MOSTRAR MÁS

Otros transistores... AP50WN520I, AP50WN270W, AP50WN270IN, AP50WN270I, AP50WN1K5P, AP50WN1K5I, AP50WN1K5H, AP50WN1K0I, IRF3710, AP50T10GS, AP50T10GP, AP50T10GJ, AP50T10GI, AP50T10GH, AP50T10AGI, AP50SL290DH, AP50PN520R