AP50WN1K0H Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP50WN1K0H
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 83.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 22 ns
Cossⓘ - Выходная емкость: 45 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.03 Ohm
Тип корпуса: TO252
Аналог (замена) для AP50WN1K0H
AP50WN1K0H Datasheet (PDF)
ap50wn1k0h.pdf

AP50WN1K0HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.03 Fast Switching Characteristic ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K0 series are from the innovated design and siliconGprocess technology to achieve the lowest possible o
ap50wn1k0i.pdf

AP50WN1K0IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.03 Fast Switching Characteristic ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K0 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r
ap50wn1k5i.pdf

AP50WN1K5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r
ap50wn1k5h.pdf

AP50WN1K5HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K5 series are from the innovated design and siliconGprocess technology to achieve the lowest possible o
Другие MOSFET... AP50WN520I , AP50WN270W , AP50WN270IN , AP50WN270I , AP50WN1K5P , AP50WN1K5I , AP50WN1K5H , AP50WN1K0I , P55NF06 , AP50T10GS , AP50T10GP , AP50T10GJ , AP50T10GI , AP50T10GH , AP50T10AGI , AP50SL290DH , AP50PN520R .
History: CHM634PAGP | ZXMN6A07F | NVMFS5A140PLZ
History: CHM634PAGP | ZXMN6A07F | NVMFS5A140PLZ



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