Справочник MOSFET. AP50WN1K0H

 

AP50WN1K0H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP50WN1K0H
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 83.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 22 ns
   Cossⓘ - Выходная емкость: 45 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.03 Ohm
   Тип корпуса: TO252

 Аналог (замена) для AP50WN1K0H

 

 

AP50WN1K0H Datasheet (PDF)

 ..1. Size:197K  ape
 ap50wn1k0h.pdf

AP50WN1K0H AP50WN1K0H

AP50WN1K0HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.03 Fast Switching Characteristic ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K0 series are from the innovated design and siliconGprocess technology to achieve the lowest possible o

 5.1. Size:175K  ape
 ap50wn1k0i.pdf

AP50WN1K0H AP50WN1K0H

AP50WN1K0IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.03 Fast Switching Characteristic ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K0 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r

 6.1. Size:176K  ape
 ap50wn1k5i.pdf

AP50WN1K0H AP50WN1K0H

AP50WN1K5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r

 6.2. Size:198K  ape
 ap50wn1k5h.pdf

AP50WN1K0H AP50WN1K0H

AP50WN1K5HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K5 series are from the innovated design and siliconGprocess technology to achieve the lowest possible o

 6.3. Size:66K  ape
 ap50wn1k5p.pdf

AP50WN1K0H AP50WN1K0H

AP50WN1K5PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 500VD Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5AG RoHS Compliant & Halogen-FreeSDescriptionAP50WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-r

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
Back to Top