AP50T10GI Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP50T10GI 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 21.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 26 nS
Cossⓘ - Capacitancia de salida: 190 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Encapsulados: TO220F
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AP50T10GI datasheet
ap50t10gi.pdf
AP50T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 21.8A G RoHS Compliant & Halogen-Free S Description AP50T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowes
ap50t10gi-hf.pdf
AP50T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 21.8A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz
ap50t10gm-hf.pdf
AP50T10GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 30m Surface Mount Package ID 6.5A G Halogen Free & RoHS Compliant Product S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
ap50t10gh.pdf
AP50T10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37A G RoHS Compliant & Halogen-Free S Description AP50T10 series are from Advanced Power innovated design and G D S TO-252(H) silicon process technology
Otros transistores... AP50WN1K5P, AP50WN1K5I, AP50WN1K5H, AP50WN1K0I, AP50WN1K0H, AP50T10GS, AP50T10GP, AP50T10GJ, 2N7000, AP50T10GH, AP50T10AGI, AP50SL290DH, AP50PN520R, AP4P052J, AP4P052H, AP4P016P, AP4P016I
History: SI4896DY | DHDSJ7N65
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