AP50T10GI Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP50T10GI
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 31.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 21.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 26 ns
Cossⓘ - Выходная емкость: 190 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
Тип корпуса: TO220F
Аналог (замена) для AP50T10GI
AP50T10GI Datasheet (PDF)
ap50t10gi.pdf

AP50T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 21.8AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10 series are from Advanced Power innovated design andsilicon process technology to achieve the lowes
ap50t10gi-hf.pdf

AP50T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 21.8AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz
ap50t10gm-hf.pdf

AP50T10GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 30m Surface Mount Package ID 6.5AG Halogen Free & RoHS Compliant ProductSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,
ap50t10gh.pdf

AP50T10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10 series are from Advanced Power innovated design andGDSTO-252(H)silicon process technology
Другие MOSFET... AP50WN1K5P , AP50WN1K5I , AP50WN1K5H , AP50WN1K0I , AP50WN1K0H , AP50T10GS , AP50T10GP , AP50T10GJ , IRF9540 , AP50T10GH , AP50T10AGI , AP50SL290DH , AP50PN520R , AP4P052J , AP4P052H , AP4P016P , AP4P016I .
History: HTJ600N06 | AP99T03GP | PSMN5R0-100PS | AUIRFSL8403 | MMQ60R115PTH | VBE1638
History: HTJ600N06 | AP99T03GP | PSMN5R0-100PS | AUIRFSL8403 | MMQ60R115PTH | VBE1638



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