AP4P052J Todos los transistores

 

AP4P052J MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4P052J
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
   Paquete / Cubierta: TO251
 

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AP4P052J Datasheet (PDF)

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AP4P052J

AP4P052JHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 52m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAP4P052 series are from Advanced Power innovated design and GDSTO-251(J)silicon process technology to achieve

 7.1. Size:68K  ape
 ap4p052h.pdf pdf_icon

AP4P052J

AP4P052HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 52m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionGAP4P052 series are from Advanced Power innovated design andDSsilicon process technology to achieve the lowes

 9.1. Size:176K  ape
 ap4p013les.pdf pdf_icon

AP4P052J

AP4P013LESHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 14.5m Fast Switching Characteristic ID -50AG RoHS Compliant & Halogen-FreeSDescriptionAP4P013LE series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

 9.2. Size:204K  ape
 ap4p012leh.pdf pdf_icon

AP4P052J

AP4P012LEHHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -51AG RoHS Compliant & Halogen-FreeSDescriptionAP4P012LE series are from Advanced Power innovated design and GDsilicon process technology to achieve the

MOSTRAR MÁS

Otros transistores... AP50T10GS , AP50T10GP , AP50T10GJ , AP50T10GI , AP50T10GH , AP50T10AGI , AP50SL290DH , AP50PN520R , 7N65 , AP4P052H , AP4P016P , AP4P016I , AP4P016H , AP4P013LES , AP4P013LEP , AP4P012LEH , AP4N4R2H .

History: PHD9NQ20T | LNC06R230 | FHU2N60A

 

 
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