Справочник MOSFET. AP4P052J

 

AP4P052J Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP4P052J
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 17 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 80 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.052 Ohm
   Тип корпуса: TO251
     - подбор MOSFET транзистора по параметрам

 

AP4P052J Datasheet (PDF)

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 ap4p052j.pdf pdf_icon

AP4P052J

AP4P052JHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 52m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAP4P052 series are from Advanced Power innovated design and GDSTO-251(J)silicon process technology to achieve

 7.1. Size:68K  ape
 ap4p052h.pdf pdf_icon

AP4P052J

AP4P052HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 52m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionGAP4P052 series are from Advanced Power innovated design andDSsilicon process technology to achieve the lowes

 9.1. Size:176K  ape
 ap4p013les.pdf pdf_icon

AP4P052J

AP4P013LESHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 14.5m Fast Switching Characteristic ID -50AG RoHS Compliant & Halogen-FreeSDescriptionAP4P013LE series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

 9.2. Size:204K  ape
 ap4p012leh.pdf pdf_icon

AP4P052J

AP4P012LEHHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -51AG RoHS Compliant & Halogen-FreeSDescriptionAP4P012LE series are from Advanced Power innovated design and GDsilicon process technology to achieve the

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History: AONU32320 | YTF840 | BSS138A | AP4N4R2H | STF20NM60D | 2SJ542

 

 
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