AP4P052J - аналоги и даташиты транзистора

 

AP4P052J - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP4P052J
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 17 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 80 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.052 Ohm
   Тип корпуса: TO251
 

 Аналог (замена) для AP4P052J

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP4P052J Datasheet (PDF)

 ..1. Size:67K  ape
 ap4p052j.pdf pdf_icon

AP4P052J

AP4P052JHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 52m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAP4P052 series are from Advanced Power innovated design and GDSTO-251(J)silicon process technology to achieve

 7.1. Size:68K  ape
 ap4p052h.pdf pdf_icon

AP4P052J

AP4P052HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 52m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionGAP4P052 series are from Advanced Power innovated design andDSsilicon process technology to achieve the lowes

 8.1. Size:1517K  cn apm
 ap4p05mi.pdf pdf_icon

AP4P052J

AP4P05MI -55V P-Channel Enhancement Mode MOSFET Description The AP4P05MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -55V I =-4.2A DS DR

 9.1. Size:176K  ape
 ap4p013les.pdf pdf_icon

AP4P052J

AP4P013LESHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 14.5m Fast Switching Characteristic ID -50AG RoHS Compliant & Halogen-FreeSDescriptionAP4P013LE series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

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Другие MOSFET... AP50T10GS , AP50T10GP , AP50T10GJ , AP50T10GI , AP50T10GH , AP50T10AGI , AP50SL290DH , AP50PN520R , IRF9540 , AP4P052H , AP4P016P , AP4P016I , AP4P016H , AP4P013LES , AP4P013LEP , AP4P012LEH , AP4N4R2H .

History: P45N02LI | HMS4N70 | SHD225611 | UT4404G-S08-R | SVF7N80K | TSP8N65M | 2SK2140

 

 
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