AP4P052J datasheet, подбор замены

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 ap4p052j.pdf 

AP4P052J Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 52m Fast Switching Characteristic ID -17A G RoHS Compliant & Halogen-Free S Description AP4P052 series are from Advanced Power innovated design and G D S TO-251(J) silicon process technology to achieve

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 ap4p052h.pdf 

AP4P052H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 52m Fast Switching Characteristic ID -17A G RoHS Compliant & Halogen-Free S Description G AP4P052 series are from Advanced Power innovated design and D S silicon process technology to achieve the lowes

 8.1. Size:1517K  cn apm
 ap4p05mi.pdf 

AP4P05MI -55V P-Channel Enhancement Mode MOSFET Description The AP4P05MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -55V I =-4.2A DS D R

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 ap4p013les.pdf 

AP4P013LES Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 14.5m Fast Switching Characteristic ID -50A G RoHS Compliant & Halogen-Free S Description AP4P013LE series are from Advanced Power innovated design and silicon process technology to achieve the lowe

 9.2. Size:204K  ape
 ap4p012leh.pdf 

AP4P012LEH Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -51A G RoHS Compliant & Halogen-Free S Description AP4P012LE series are from Advanced Power innovated design and G D silicon process technology to achieve the

 9.3. Size:179K  ape
 ap4p016i.pdf 

AP4P016I Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID4 -36A G RoHS Compliant & Halogen-Free S Description AP4P016 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possib

 9.4. Size:205K  ape
 ap4p016h.pdf 

AP4P016H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45A G RoHS Compliant & Halogen-Free S Description G AP4P016 series are from Advanced Power innovated design and D S silicon process technology to achieve the lowes

 9.5. Size:164K  ape
 ap4p013lep.pdf 

AP4P013LEP Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 14.5m Fast Switching Characteristic ID -50A G RoHS Compliant & Halogen-Free S Description AP4P013LE series are from Advanced Power innovated design and silicon process technology to achieve the lowe

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 ap4p018m.pdf 

AP4P018M Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS -40V Fast Switching Characteristic RDS(ON) 18m Simple Drive Requirement ID3 -9.4A G RoHS Compliant & Halogen-Free S Description D D AP4P018 series are from Advanced Power innovated design and silicon D D process technology to achieve th

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 ap4p016p.pdf 

AP4P016P Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45A G RoHS Compliant & Halogen-Free S Description AP4P016 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possibl