AP4P016H Todos los transistores

 

AP4P016H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4P016H
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 52 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 58 nS
   Cossⓘ - Capacitancia de salida: 285 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: TO252
 

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AP4P016H Datasheet (PDF)

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AP4P016H

AP4P016HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS Compliant & Halogen-FreeSDescriptionGAP4P016 series are from Advanced Power innovated design andDSsilicon process technology to achieve the lowes

 7.1. Size:179K  ape
 ap4p016i.pdf pdf_icon

AP4P016H

AP4P016IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID4 -36AG RoHS Compliant & Halogen-FreeSDescriptionAP4P016 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possib

 7.2. Size:72K  ape
 ap4p016p.pdf pdf_icon

AP4P016H

AP4P016PHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS Compliant & Halogen-FreeSDescriptionAP4P016 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possibl

 8.1. Size:176K  ape
 ap4p013les.pdf pdf_icon

AP4P016H

AP4P013LESHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 14.5m Fast Switching Characteristic ID -50AG RoHS Compliant & Halogen-FreeSDescriptionAP4P013LE series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

MOSTRAR MÁS

Otros transistores... AP50T10GH , AP50T10AGI , AP50SL290DH , AP50PN520R , AP4P052J , AP4P052H , AP4P016P , AP4P016I , 12N60 , AP4P013LES , AP4P013LEP , AP4P012LEH , AP4N4R2H , AP4N3R6P , AP4N3R6H , AP4N3R2MT , AP4N3R2I .

History: SI9926CDY | UTT25N08 | 2SK2572

 

 
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