AP4P016H Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP4P016H
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 52 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 45 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 58 ns
Cossⓘ - Выходная емкость: 285 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
Тип корпуса: TO252
Аналог (замена) для AP4P016H
AP4P016H Datasheet (PDF)
ap4p016h.pdf

AP4P016HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS Compliant & Halogen-FreeSDescriptionGAP4P016 series are from Advanced Power innovated design andDSsilicon process technology to achieve the lowes
ap4p016i.pdf

AP4P016IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID4 -36AG RoHS Compliant & Halogen-FreeSDescriptionAP4P016 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possib
ap4p016p.pdf

AP4P016PHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS Compliant & Halogen-FreeSDescriptionAP4P016 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possibl
ap4p013les.pdf

AP4P013LESHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 14.5m Fast Switching Characteristic ID -50AG RoHS Compliant & Halogen-FreeSDescriptionAP4P013LE series are from Advanced Power innovated design andsilicon process technology to achieve the lowe
Другие MOSFET... AP50T10GH , AP50T10AGI , AP50SL290DH , AP50PN520R , AP4P052J , AP4P052H , AP4P016P , AP4P016I , 12N60 , AP4P013LES , AP4P013LEP , AP4P012LEH , AP4N4R2H , AP4N3R6P , AP4N3R6H , AP4N3R2MT , AP4N3R2I .
History: 2SK118 | HM180N02K | PNM723T703E0-2 | BLP02N06L-D | JCS18N25VC | 2SK3557-7-TB-E | QM3006U
History: 2SK118 | HM180N02K | PNM723T703E0-2 | BLP02N06L-D | JCS18N25VC | 2SK3557-7-TB-E | QM3006U



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