AP4N2R6P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4N2R6P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 104 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 130 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Tiempo de elevación (tr): 63 nS

Conductancia de drenaje-sustrato (Cd): 720 pF

Resistencia drenaje-fuente RDS(on): 0.0026 Ohm

Empaquetado / Estuche: TO220

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AP4N2R6P Datasheet (PDF)

1.1. ap4n2r6p.pdf Size:111K _a-power

AP4N2R6P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Simple Drive Requirement D BVDSS 40V ▼ Ultra-low On-resistance RDS(ON) 2.6mΩ ▼ Fast Switching Characteristic G G ▼ RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP4N2R6 seriesare fromAdvanced Power innovated desi

3.1. ap4n2r6j.pdf Size:207K _a-power

AP4N2R6J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Simple Drive Requirement D BVDSS 40V ▼ Ultra-low On-resistance RDS(ON) 2.6mΩ ▼ Fast Switching Characteristic G G ▼ RoHS Compliant & Halogen-Free S S Description G D S TO-251(J) AP4604 series arefrom Advanced Power innovated design AP4N2R6 seriesare fromAdvanced P

3.2. ap4n2r6h.pdf Size:242K _a-power

AP4N2R6H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Simple Drive Requirement D BVDSS 40V ▼ Ultra-low On-resistance RDS(ON) 2.6mΩ ▼ Fast Switching Characteristic G G ▼ RoHS Compliant & Halogen-Free S S Description G AP4604 series arefrom Advanced Power innovated design AP4N2R6 seriesare fromAdvanced Power innovated d

3.3. ap4n2r6amt.pdf Size:162K _a-power

AP4N2R6AMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 40V D ▼ Simple Drive Requirement RDS(ON) 2.6mΩ ▼ Ultra Low On-resistance G ▼ RoHS Compliant & Halogen-Free D S D D Description D AP4N2R6A series are from Advanced Power innovated design and silicon process technology to achieve the lowest

3.4. ap4n2r6s.pdf Size:104K _a-power

AP4N2R6S Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Simple Drive Requirement D BVDSS 40V ▼ Ultra-low On-resistance RDS(ON) 2.6mΩ ▼ Fast Switching Characteristic G G ▼ RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP4N2R6 seriesare fromAdvanced Power innovated desi

3.5. ap4n2r6mt.pdf Size:163K _a-power

AP4N2R6MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 40V D ▼ Simple Drive Requirement RDS(ON) 2.6mΩ ▼ Ultra Low On-resistance ID4 150A G ▼ RoHS Compliant & Halogen-Free D S D D Description D AP4N2R6 series are from Advanced Power innovated design and silicon process technology to achieve the

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