AP4N2R6P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4N2R6P 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 104 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 130 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 63 nS
Cossⓘ - Capacitancia de salida: 720 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
Encapsulados: TO220
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AP4N2R6P datasheet
ap4n2r6p.pdf
AP4N2R6P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 2.6m Fast Switching Characteristic G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP4N2R6 seriesare fromAdvanced Power innovated desi
ap4n2r6amt.pdf
AP4N2R6AMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 40V D Simple Drive Requirement RDS(ON) 2.6m Ultra Low On-resistance G RoHS Compliant & Halogen-Free D S D D Description D AP4N2R6A series are from Advanced Power innovated design and silicon process technology to achieve the lowest
ap4n2r6h.pdf
AP4N2R6H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 2.6m Fast Switching Characteristic G G RoHS Compliant & Halogen-Free S S Description G AP4604 series arefrom Advanced Power innovated design AP4N2R6 seriesare fromAdvanced Power innovated d
ap4n2r6mt.pdf
AP4N2R6MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 40V D Simple Drive Requirement RDS(ON) 2.6m Ultra Low On-resistance ID4 150A G RoHS Compliant & Halogen-Free D S D D Description D AP4N2R6 series are from Advanced Power innovated design and silicon process technology to achieve the
Otros transistores... AP4P013LEP, AP4P012LEH, AP4N4R2H, AP4N3R6P, AP4N3R6H, AP4N3R2MT, AP4N3R2I, AP4N2R6S, IRLB4132, AP4N2R6MT, AP4N2R6J, AP4N2R6H, AP4N2R6AMT, AP4N1R8CMT-A, AP4N1R1CDT-A, AP4820AGYT, AP4804MT
Parámetros del MOSFET. Cómo se afectan entre sí.
History: APT7F100S | NDC631N
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