AP4N2R6J Todos los transistores

 

AP4N2R6J MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4N2R6J
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 63 nS
   Cossⓘ - Capacitancia de salida: 720 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
   Paquete / Cubierta: TO251
 

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AP4N2R6J Datasheet (PDF)

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AP4N2R6J

AP4N2R6JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 2.6m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescription GDSTO-251(J)AP4604 series arefrom Advanced Power innovated designAP4N2R6 seriesare fromAdvanced P

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 ap4n2r6amt.pdf pdf_icon

AP4N2R6J

AP4N2R6AMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 40VD Simple Drive Requirement RDS(ON) 2.6m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP4N2R6A series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

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 ap4n2r6p.pdf pdf_icon

AP4N2R6J

AP4N2R6PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 2.6m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP4N2R6 seriesare fromAdvanced Power innovated desi

 7.3. Size:242K  ape
 ap4n2r6h.pdf pdf_icon

AP4N2R6J

AP4N2R6HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 2.6m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionGAP4604 series arefrom Advanced Power innovated designAP4N2R6 seriesare fromAdvanced Power innovated d

MOSTRAR MÁS

Otros transistores... AP4N4R2H , AP4N3R6P , AP4N3R6H , AP4N3R2MT , AP4N3R2I , AP4N2R6S , AP4N2R6P , AP4N2R6MT , AO4407 , AP4N2R6H , AP4N2R6AMT , AP4N1R8CMT-A , AP4N1R1CDT-A , AP4820AGYT , AP4804MT , AP4800N2 , AP4618CDT .

History: JFFM18N50C | PDC2603Z | SIS488DN | HY3208PM | PDC3904Z | AP4N1R8CMT-A | IPA50R190CE

 

 
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